A method to etch barrier layer of self-alignment refractory metal silicide

Abstract

The disclosed etching method for self-alignment undissolved metal silicide comprises: injecting from NMOS and PMOS; growing the barrier layer; coating glue; preparing the barrier layer mask; wetting etching; dried removing glue; wetting removing the glue; diffusing the drain to anneal. This invention releases the etching effect to salicide block before HF etching, and cuts the production period greatly.

Description

technical field [0001] The invention relates to an etching method for a Salicide block (self-aligned refractory metal silicon compound barrier layer), in particular to an etching method capable of effectively protecting the self-aligned refractory metal silicon compound barrier layer. Background technique [0002] With the development of integrated circuit technology, the line width of polysilicon and the space between line widths are becoming narrower and narrower. In order to meet the needs of design, this requires that the film of Salicide block should be as thin as possible. However, after the Salicide block becomes thinner, there are two negative effects. One is that the Salicide block will produce more pinholes, which directly affects the performance of the Salicide block; the other is the formation of Salicide (self-aligned refractory metal silicon compound) The previous HF (hydrofluoric acid) etching will have a fatal effect on the relatively thin Salicide block, and...

AI Technical Summary

Problems solved by technology

However, after the thinning of the Salicide block, there are two negative effects. One is that the Salicide block will produce more pinholes, which directly affects the performance of the Salicide block; the other is the formation of Salicide (self-aligned refractory metal silicon compound) The previous HF (hydrofluoric acid) etching will have a fatal effect on the thinner Salicide block, and even wash off the Salicide block completely

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