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Semiconductor device

A semiconductor, outstanding technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem of low layout freedom, and achieve the effect of easy assembly and processing

Inactive Publication Date: 2009-01-14
SOCIONEXT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, in the above-mentioned semiconductor device, since wiring cannot be routed inside it, there is a problem that the degree of freedom in the layout of the protruding electrodes 4 to be external connection terminals is low.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Effect test

Embodiment 2

[0356] The semiconductor device 10A of the second embodiment is configured by mounting a plurality of semiconductor devices 11 on a stage member 80 to form a modular structure. In addition, the resin layer 13 is configured to seal the protruding electrode 12 up to the side of the semiconductor device 11 while leaving the tip portion sealed. In addition, the stage 80 is formed of a material (for example, copper or aluminum) with good heat dissipation.

[0357] In the semiconductor device 10A configured as described above, since a material with good heat dissipation is used as the stage 80 , high heat dissipation can be maintained even when a plurality of semiconductor devices 11 are mounted.

[0358] Furthermore, the semiconductor device 10B of Embodiment 3 is characterized in that: Figure 26 In the semiconductor device 10A, the bank portion 81 is formed on the outer peripheral side of the stage 80 . The height H2 ( Figure 27 , indicated by an arrow) is configured to be hi...

Embodiment 9

[0368] Figure 29 is an explanatory diagram for explaining the semiconductor manufacturing method of Embodiment 9, in Figure 29 in, for use with Figure 1 to Figure 9 The same configurations as those of the embodiments described in Embodiment 1 are given the same reference numerals and description thereof will be omitted.

[0369] In this embodiment, although it is the same as the above-mentioned embodiment, it is also characterized in that as the sealing resin used in the resin sealing process, a variety of sealing resins (2 in this embodiment) with different characteristics are used. type), however, in the above-mentioned embodiment 8, the resin layer 13A, 13B which is different from each other is laminated, but in the present embodiment, the resin layer 13B is disposed on the outer peripheral position of the substrate 16 Above, the structure in which the resin layer 13A is arranged at a position surrounded by the resin layer 13B (see Figure 29 (C)). Hereinafter, a met...

Embodiment 12

[0384] Figure 32 and Figure 33 It is an explanatory diagram of the manufacturing method of the semiconductor device of the twelfth embodiment. exist Figure 32 and Figure 33 in, for use with Figure 1 to Figure 9 The same configurations as those described in Embodiment 1 are assigned the same reference numerals and description thereof will be omitted.

[0385] The manufacturing method of this embodiment is characterized in that: in the sealing resin step, first, as in the previous embodiments, a resin layer 13 (the first resin layer 13) is formed on the surface of the substrate 16 on which the protruding electrodes 12 have been formed. layer), a second resin layer 17 is formed on the back surface of the substrate 16 . Below, use Figure 32 and Figure 33 A specific resin sealing process in this embodiment will be described.

[0386] Figure 32 (A)~ Figure 32 (B) shows the step of compression-molding the first resin layer 13 on the surface of the substrate 16 on w...

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PUM

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Abstract

The invention discloses a semiconductor device, which is characterized by the following: forming semiconductor element with projected electrode on the surface; sealing the resin layer of projected electrode through top part of projected electrode; forming projection on the surface of semiconductor element with exposed top part of resin layer.

Description

[0001] This application is a divisional application of an invention patent application with an application date of July 10, 1997, an application number of 02126233.0, and an invention title of "semiconductor device and method for manufacturing a semiconductor device". technical field [0002] The present invention relates to a semiconductor device, a method for manufacturing the semiconductor device, a mold for manufacturing the semiconductor device, and the semiconductor device, and more particularly, to a semiconductor device having a chip-size package structure. Background technique [0003] In recent years, along with demands for miniaturization of electronic equipment and devices, miniaturization and high density of semiconductor devices are being sought. Therefore, the miniaturization of the semiconductor device has been achieved by making the shape of the semiconductor device as close as possible to the semiconductor device (chip). A semiconductor device of a so-calle...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485
CPCH01L24/97H01L2224/16225H01L2224/32225H01L2224/45144H01L2224/48091H01L2224/73204H01L2224/92125H01L2924/181H01L2924/351H01L2924/00014H01L2924/00
Inventor 深泽则雄川原登志实森冈宗知大泽满洋松木浩久小野寺正德河西纯一丸山茂幸竹中正司新间康弘佐久间正夫铃木义美
Owner SOCIONEXT INC
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