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A manufacture method for GaN insulation or semi-insulation epitaxy layer

An epitaxial layer, semi-insulating technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high electron concentration on the back and bottom of GaN materials, device failure, and difficult GaN epitaxial layers

Active Publication Date: 2009-02-25
WUHAN UNIV
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  • Application Information

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Problems solved by technology

However, there is a difficulty in the growth of insulating GaN materials. Usually, the electron concentration at the back and bottom of GaN materials is very high, and it is difficult to directly obtain insulating or semi-insulating GaN epitaxial layers.
As a power device, the poor insulation performance of the GaN substrate is likely to cause a decrease in breakdown voltage, high-frequency leakage, and device failure.

Method used

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  • A manufacture method for GaN insulation or semi-insulation epitaxy layer
  • A manufacture method for GaN insulation or semi-insulation epitaxy layer
  • A manufacture method for GaN insulation or semi-insulation epitaxy layer

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Embodiment Construction

[0023] Select two inches of Al 2 o 3 , SiC or Si as the substrate, and the substrate was cleaned at 810°C for 10 minutes before growth. The substrate is placed in the reaction growth chamber, and the substrate is nitrided at a high temperature for 10 to 30 minutes at any temperature within the temperature range of 800 to 850°C. In this embodiment, it is specifically 810°C, and then at a temperature of 750 to 780°C. A 10-20nm AlN (Al / N>1) buffer layer is grown at a high temperature at any temperature. A 20-40nm three-dimensional GaN nucleation layer was grown at low temperature. In this example, a 20-nm GaN nucleation layer was grown at 720°C, and then the temperature was gradually increased to any temperature within the temperature range of 750-780°C. A two-dimensional GaN epitaxial layer of 100-150 nm is grown. In this embodiment, a two-dimensional GaN epitaxial layer of 100 nm is grown gradually at 760°C. Then continue to epitaxially grow GaN while implementing in-situ do...

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Abstract

The provided preparation method for high-quality GaN insulation or semi-insulation epitaxial layer comprises: selecting Al2O3, SiC or Si as the substrate to nitrogenize at high-temperature; in turns, growing the AlN nucleation layer at 750-780Deg, 3D growing GaN nucleation layer at 720-730Deg, 2D growing GaN epitaxial layer at 750-780Deg, and doping Fe, Cr or Mg; then, using AlGaN / GaN superlattice or multi-cycle intermittent atomic-layer pulse deposition method to grow GaN transient layer, and growing the final product on high III / V ratio condition at 720-730Deg. This invention can be used to microwave device.

Description

technical field [0001] The invention relates to a preparation method of a GaN insulating or semi-insulating epitaxial layer. Background technique [0002] Gallium nitride (GaN) is the third-generation semiconductor after Si and GaAs, with wide bandgap (3.5eV), high breakdown field strength (3×10 6 V / cm), high electron saturation drift rate (3×10 7 cm / s), high thermal conductivity. In addition, GaN materials are very hard, have stable chemical properties, high temperature resistance, corrosion resistance, good thermal conductivity, good radiation resistance characteristics and excellent high temperature working characteristics. This makes GaN a good substrate for high-power, high-speed, high-frequency (microwave), high-temperature electronic devices that can operate in harsh environments. However, there is a difficulty in the growth of insulating GaN materials. Usually, the electron concentration at the back and bottom of GaN materials is very high, and it is difficult to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20
Inventor 刘昌梅菲
Owner WUHAN UNIV