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Lateral field-effect transistor having an insulated trench gate electrode

A lateral and gate technology, applied in the field of lateral trench MOS structures, can solve problems such as low threshold voltage

Inactive Publication Date: 2009-04-22
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, its low threshold voltage

Method used

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  • Lateral field-effect transistor having an insulated trench gate electrode
  • Lateral field-effect transistor having an insulated trench gate electrode
  • Lateral field-effect transistor having an insulated trench gate electrode

Examples

Experimental program
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Effect test

Embodiment Construction

[0030] see figure 2 and image 3 , semi-insulating n - Type substrate 2 has formed thereon an n-type layer forming a drift region 20 at a first main surface 16 of the semiconductor device. Unit 18 has a pass n + The source region 22 and the drain region 24 formed by implantation are vertically separated from the p-type source body region 26 located at the drain end of the source region 22 and the p-type drain body region 28 located at the source end of the drain region 24 . The drift region 20 extends from a source body region 26 to a drain body region 28 . Cell 18 thus includes source region 22, drain region 24, and a central region comprising source body region 26, drift region 20, and drain body region 28 connecting the source and drain to form a channel through the cell. , the channel conducts electrons when the device is turned on.

[0031] In the preferred embodiment, source region 22 and drain region 24 are formed by shallow implantation with a depth of less than ...

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PUM

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Abstract

The present invention provides a field-effect transistor having cells (18) each having a source region (22), source body region (26), drift region (20), drain body region (28) and drain region (24) arranged longitudinally, laterally alternating with structures to achieve a reduced surface field. In embodiments, the structures can include longitudinally spaced insulated gate trenches (35) defining a gate region (31) adjacent the source or drain region (22, 24) and a longitudinally extending potential plate region (33) adjacent the drift region (20). Alternatively, a separate potential plate region (33) or a longitudinally extending semi-insulating field plate (50) may be provided adjacent the drift region (20). The transistor is suitable for bi-directional switching.

Description

technical field [0001] The invention relates to a trench field effect transistor structure, especially a lateral trench MOS structure for bidirectional switching. Background technique [0002] For many applications, a switch capable of switching both positive and negative biases is very attractive. For example, in a portable device powered by a rechargeable battery pack or a single battery, a power switch is used to connect the battery to the device. A power switch needs to be able to block current passing through it in either direction. [0003] One solution is to use two low-voltage trench metal-oxide-semiconductor field-effect transistors (MOSFETs) connected in series. The drains or sources of the two MOSFETs are connected together in a common-drain or common-source mode, respectively. When both MOSFETs are on, the MOSFET pair is on for charging. The disadvantage of this approach is that using two MOSFETs increases the resistance of the MOSFET pair beyond that of a si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L29/08H01L29/40
CPCH01L29/4236H01L29/402H01L29/7838H01L29/0847H01L29/7825H01L29/42368H01L29/407H01L21/18H01L27/085
Inventor R·J·E·许廷E·A·海曾
Owner NXP BV