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Electroconducting gas sensitive sensor capable of working under room temperature

A gas sensor and conductance technology, applied in the field of gas sensors, can solve the problems of high energy consumption, easy aging of interdigital electrodes and gas-sensitive layers, miniaturization and integration difficulties of conductance-type gas sensors, and prolong service life , Solve the effects of easy aging and small device size

Inactive Publication Date: 2009-05-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high working temperature, a heater must be configured, which not only consumes a lot of energy, but also causes the interdigital electrodes and the gas-sensitive layer to age easily. Therefore, how to design a gas sensor that can work at room temperature, is miniaturized, and is compatible with silicon integrated circuit technology is one of the hot spots in the current gas sensor research.

Method used

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  • Electroconducting gas sensitive sensor capable of working under room temperature
  • Electroconducting gas sensitive sensor capable of working under room temperature
  • Electroconducting gas sensitive sensor capable of working under room temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0012] A conductivity-type gas sensor that can work at room temperature, such as the structure figure 1 As shown, the substrate is a silicon wafer, which is cleaned with a standard integrated circuit cleaning process; the cleaned silicon wafer is oxidized at a high temperature at a temperature of 1000°C for 2 hours, and a layer of silicon dioxide insulating layer is formed on the surface of the silicon wafer. , the thickness of the insulating layer is 55nm; a phosphorus-doped polysilicon film is deposited on the insulating layer by a conventional process, and the doping concentration is greater than 10 18 cm -3 ; Then use conventional photolithography and mask technology to form interdigitated electrodes in the polysilicon film, the number of electrode pairs is 10 pairs, the electrode width and its spacing are 5 μm; deposit a layer on the silicon wafer after forming the doped polysilicon electrodes The nanometer zinc oxide film is used as a gas sensitive layer, and the partic...

Embodiment 2

[0014] A conductivity-type gas sensor that can work at room temperature, such as the structure figure 1 As shown, the substrate is a silicon wafer, which is cleaned with a standard integrated circuit cleaning process; the cleaned silicon wafer is oxidized at a high temperature at a temperature of 1000°C for 2 hours, and a layer of silicon dioxide insulating layer is formed on the surface of the silicon wafer. , the thickness of the insulating layer is 80nm; a phosphorus-doped polysilicon film is deposited on the insulating layer by a conventional process, and the doping concentration is greater than 10 18 cm -3 ; Then use conventional photolithography and mask technology to form another finger electrode in the polysilicon film, the number of electrode pairs is 8 pairs, the electrode width and its spacing are 25 μm; deposit a layer on the silicon wafer after forming the doped polysilicon electrode Nano-zinc oxide film is used as a gas-sensing layer. The particle size of zinc o...

Embodiment 3

[0016] A conductivity-type gas sensor that can work at room temperature, the particle size of zinc oxide is 20nm, 25nm, 35nm respectively, the overall size of the sensor is 1 * 1 * 1mm (leads not included), and the rest are the same as in Example 2. The conductivity type gas sensor of the above-mentioned nanometer zinc oxide gas sensitive layer of different particle diameters, the change relation of the sensitivity of sensor to benzene vapor at room temperature is shown in image 3 .

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Abstract

The invention relates to a conductive gas sensitive sensor capable of working at room temperature. It is characterized by that its substrate is silicon monocrystal substrate, insulating layer is silicon dioxide insulating layer, interdigital electrode adopts N-type doped polysilicon electrode and gas sensitive layer is nano zinc oxide gas sensitive layer. Said conductive gas sensitive sensor can be worked at room temperature, and it has no need of using heating device.

Description

technical field [0001] The invention relates to a gas sensor, in particular to a conductance gas sensor which can work at room temperature. Specifically, it is a conductivity-type gas sensor that uses nano-zinc oxide particles as the gas-sensing film, and uses low-resistance N-type doped polysilicon as the interdigital electrode. The sensor does not need a heating power supply and can work at room temperature. Background technique [0002] Commonly used conductivity-type gas sensors need to work at a temperature above 300°C in order to obtain sufficient sensitivity. The conductometric gas sensor detects the presence of gas molecules by using the charge transfer caused by chemical adsorption or reaction between the gas molecules to be measured and the surface of the gas-sensitive material, which leads to changes in conductivity. If the temperature is too low, the reaction cannot occur or the reaction is not obvious. Therefore, the general conductivity type gas sensor needs t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/407
Inventor 季振国赵士超孙兰侠
Owner ZHEJIANG UNIV