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Peripheral circuit balanced drive magnetic random access memory

A random access memory and peripheral circuit technology, applied in the field of information reading and writing in MRAM, can solve the problems of high cost, poor surface smoothness, increased process difficulty and manufacturing cost, etc., to reduce production costs, broad application prospects, simplify structure effect

Inactive Publication Date: 2009-06-03
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] As mentioned above, the MRAM of this structure needs up to three metal wiring layers and one transition metal layer to form its electrical connection, making the manufacturing process of MRAM complicated and costly.
In addition, before manufacturing the magnetic thin film memory unit, the substrate has undergone several processes such as deposition, wiring, drilling, and insulating medium filling, which makes the surface flatness of the magnetic thin film memory unit manufacturing surface poor, and must be processed. Special surface polishing process (such as chemical-mechanical polishing CMP, Chemical-Mechanical Polishing) can meet the special requirements of magnetic thin film storage film on the surface flatness of its substrate, which is also a problem of increasing process difficulty and manufacturing cost

Method used

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  • Peripheral circuit balanced drive magnetic random access memory
  • Peripheral circuit balanced drive magnetic random access memory
  • Peripheral circuit balanced drive magnetic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Whether it is the reading and writing of information, the first step is to first determine the location, which is the so-called addressing. Such as figure 2 As shown, the magnetic thin film memory cell array in the MRAM memory is composed of a large number of MRAM cells. In one MRAM cell, it includes a magnetic thin film memory cell MTJ, a top electrode read word line (Read Line), and a bottom electrode write word line ( Write Line), the magnetic thin film memory cell MTJ is located directly below the top electrode read line (Read Line) and directly above the bottom electrode write line (Write Line). The read and write word lines are orthogonal to each other.

[0034] When information is read, a pre-set read current flows through one of the top electrode read word lines (the one that flows is pre-set according to one's will). The one of the bottom electrode write word lines is connected to the ground, and the current flows through the magnetic thin film storage unit ...

Embodiment 2

[0037] The present invention provides another control mode. A counter and a buffer are provided in the peripheral circuit. All the other implementations are the same as in Example 1. When reading information like this, it is no longer manually addressing as in Embodiment 1, but each MTJ is read in order, and the state of each MTJ is remembered by the buffer in the circuit, and displayed on the display, so that the circuit The status of each MTJ can be known by running through the display once.

[0038] Similarly, when information is written, the state of each MTJ can be determined in advance according to the definition, and accordingly the direction of the write current can be determined. The desired state can be obtained by passing the write current through each MTJ in turn, so that the state of all MTJs in the MTJ array can be determined once the circuit is run.

[0039] The invention can better help to solve the problems related to the magnetic storage unit (MTJ) in MRAM...

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Abstract

This invention discloses an outer circuit balance magnetic random access memory, which comprises the following: memory control unit composed of outer circuit, hand or automatic information choosing and writing-in device; memory unit array composed of magnetic thin film memory units; the top electrode reading line is in cross with the bottom electrode writing line with a magnetic thin film memory unit between them; the top electrode reading line and bottom writing line common use one pair of electrodes to control the read flow and write flow through the read and write conversion switch.

Description

technical field [0001] The present invention relates to a memory cell in a random access memory (RAM, Random Access Memory) that can be formed by a recently developed magnetoresistance effect multilayer film, and this RAM is a so-called magnetoresistive random access memory (Magnetoresistive RAM). ), referred to as MRAM, the present invention also relates to a method for realizing information reading and writing in MRAM. Background technique [0002] 1. Magnetic storage unit in MRAM [0003] As a memory unit of MRAM, the magnetic film contains at least one such film structure: [F1 / NF / F2]. Wherein F1 and F2 represent two magnetic material layers, NF represents a non-magnetic material layer, and the NF layer is between the F1 layer and the F2 layer. In F1 and F2, the magnetization direction of one and only one layer is fixed by an external layer or layers of material (called the pinned layer), so it cannot be changed arbitrarily under the action of a small external magnetic ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15G11C7/00
Inventor 魏红祥杨捍东彭子龙翟光杰韩秀峰詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI