Substrate processing method, substrate processing apparatus and control program

Abstract

A substrate processing method is provided with a step (28) for previously covering a front plane of a substrate (W) with water; a step (10) for rotating the substrate (W) within a horizontal plane by holding the substrate substantially horizontal with the front plane on an upper side; and steps (30, 40) for blowing a drying gas flow, which is narrow compared with a surface area of the substrate (W), to the front plane on the upper side of the substrate (W). In the method, water is removed from the substrate front plane by the rotation within the horizontal plane while blowing the drying air flow. The substrate processing method, a substrate processing apparatus for performing such method and a control program to be used in such method and apparatus permit the substrate after cleaning to be dried without locally leaving a water drop.

Description

technical field [0001] The present invention relates to a substrate processing method, a substrate processing apparatus and a control program, and in particular to a substrate processing method, a substrate processing apparatus and a control program for automating substrate cleaning and substrate processing without generating watermarks on substrates such as semiconductor wafers after cleaning. Background technique [0002] With the miniaturization of semiconductor devices in recent years, various material films having different physical properties are formed on substrates and processed. In particular, in a damascene wiring formation process in which wiring grooves formed on a substrate are filled with metal, the excess metal is removed by a substrate polishing apparatus (CMP) after the damascene wiring is formed, or the wiring is formed by plating As the protective layer, a metal film, a barrier film, an insulating film, and other films having different wettability to water...

AI Technical Summary

Problems solved by technology

[0005] However, in the method of controlling the rotation speed of the substrate during spin drying, in a substrate where films with different wettability coexist, such as a substrate on which a damascene wiring is formed in which a hydrophilic part and a hydrophobic part are randomly generated, depending on the wiring density and the wiring density of the substrate, Due to the difference in the nature of the hydrophobic part, fine control of the rotation speed is required, and there is a problem that the process window is narrow for production

In addition, the method of spinning drying under an inert gas environment or under reduced pressure requires time to adjust the gas environment and requires more process time, so it is not suitable

On the other hand, in the method of supplying IPA vapor, the substrate needs to be held vertically and pulled up compared to single-wafer processing equipment such as CMP, and the transport mechanism becomes complicated and integration becomes difficult.

In addition, it takes time to pull up, and there is a problem that productivity decreases

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