Semiconductor device and method for forming the same
A production method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve good matching and high reliability effects
Active Publication Date: 2009-08-19
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
The second problem is that when the metal oxide semiconductor device is turned on, hot carriers (hotcarriers) will be generated in the p-type well region
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[0050] Next, fabrication and application of preferred embodiments of the present invention will be described in detail. It will be appreciated, however, that the present invention provides many embodied inventive concepts applicable to a wide variety of fields. The specific embodiments presented are only used to illustrate the manufacture and application of the present invention, and are not intended to limit the scope of the present invention.
[0051] The present invention provides a new metal-oxide-semiconductor (MOS) device and its manufacturing method, wherein the above-mentioned metal-oxide-semiconductor can also be called reverse-extension metal-oxide-semiconductor (reverse-extension metal- oxide-semiconductor; REMOS). attached Figure 1 Sectional views initially showing intermediate steps in the fabrication of a preferred embodiment of the invention. Next, various variations of preferred specific embodiments are described. Throughout the drawings and described embo...
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The present invention provides a semiconductor device and a manufacturing method thereof. The above-mentioned semiconductor device may be a semiconductor device formed by reversely extending metal oxide using a complementary standard process, and includes a gate dielectric layer formed above the semiconductor substrate; a gate electrode formed on the gate dielectric layer; a single lightly doped drain / source region formed in the semiconductor substrate with a portion extending below the gate electrode; a deep source / drain region formed in the semiconductor substrate; and through the semiconductor substrate The top surface, the single lightly doped drain / source region, and the single embedded region of the deep source / drain region. The single embedded region is of the first conductivity type, and the single lightly doped drain / source region and the deep source / drain region are of the second conductivity type. The present invention can protect the gate dielectric layer through the embedded area, so it has high reliability, does not require additional masks, and has good matching of characteristics between components.
Description
technical field [0001] The present invention relates to a semiconductor device, in particular to a reverse-extension metal-oxide-semiconductor (REMOS) device and a manufacturing method thereof. Background technique [0002] Complementary metal-oxide-semiconductor (CMOS) devices are key components of existing integrated circuits. In order to achieve the performance and reliability required by the component application, various CMOS component designs are provided. [0003] exist figure 1 One of the commonly used CMOS devices is shown in . The CMOS includes a gate dielectric layer 4 and a gate electrode 6 formed on the p-type well region. Next, an n-type lightly doped drain / source (lightly doped drain / source; LDD) region 12 is formed near the channel region in the p-type well region (well region), and the n-type lightly doped drain / source Pole region 12 is located below gate dielectric layer 4 . Afterwards, a p-type packet region 14 is formed adjacent to the n-type lightly...
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IPC IPC(8): H01L29/78H01L27/092H01L27/12H01L21/336H01L21/8238H01L21/84
CPCH01L21/823814H01L21/823807H01L29/78H01L21/823892H01L29/0646H01L29/7835H01L29/0847H01L29/086
Inventor 蔡永智赵治平张智胜俞正明
Owner TAIWAN SEMICON MFG CO LTD