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Semiconductor component and its manufacturing method

A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large number of photomasks, elongated manufacturing process, and increased manufacturing cost, so as to reduce the number of photomasks Effect

Inactive Publication Date: 2009-10-21
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires a large number of photomasks, which will not only lengthen the manufacturing process, increase the complexity of the process, but also increase the manufacturing cost

Method used

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  • Semiconductor component and its manufacturing method
  • Semiconductor component and its manufacturing method
  • Semiconductor component and its manufacturing method

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Embodiment Construction

[0055] Figure 1A to Figure 1D It is a method for manufacturing a semiconductor element according to an embodiment of the present invention.

[0056] Please refer to Figure 1A , the manufacturing method is, for example, to firstly provide a substrate 100, the substrate 100 includes a high-voltage device region 102 and a low-voltage device region 104, and the high-voltage device region 102 has a source / drain predetermined region 102a, a contact predetermined region 102b and a channel predetermined region 102c . The substrate 100 is, for example, a silicon substrate. In the substrate 100 of the high-voltage device region 102 , for example, a high-voltage P-well 112 a and a high-voltage N-well 112 b have been formed to serve as well regions for subsequent N-type transistors and P-type transistors. The dopant of the high voltage P-well 112a is, for example, a P-type dopant such as boron or boron difluoride. The dopant of the high-voltage N well 112 b is, for example, an N-type ...

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Abstract

The invention relates to a manufacturing method for a semiconductor element; the method comprises the following steps: firstly, a base is provided and comprises a high-voltage element region and a low-voltage element region, the high-voltage element region is provided with a source / drain predetermined region, a contact predetermined region and a channel predetermined region, and a first dielectric layer is formed on the base; then the first dielectric layer of the low-voltage element region is removed, and at the same time, the first dielectric layers of the source / drain predetermined region and the contact predetermined region of the high-voltage element region are removed together; then a second dielectric layer is formed on the low-voltage element region, wherein, the thickness of the second dielectric layer is less than that of the first dielectric layer; then a grid electrode is respectively formed on the channel predetermined region and the low-voltage element region, and then a source / drain region is formed in the base of the source / drain predetermined region.

Description

technical field [0001] The invention relates to an integrated circuit structure and a manufacturing method thereof, in particular to a semiconductor element and a manufacturing method thereof. Background technique [0002] With the rapid development of the field of integrated circuits, high performance, high integration, low cost, light weight and short size have become the goals pursued by the design and manufacture of electronic products. For the current semiconductor industry, in order to meet the above goals, it is often necessary to manufacture components with multiple functions on the same chip. [0003] Integrating high-voltage components and low-voltage components on the same chip, such as a system on chip (SOC for short), is a method that can meet the above requirements. However, in order to withstand a higher breakdown voltage, the thickness of the gate oxide layer in the high-voltage device is often much thicker than that in the low-voltage device. In this way, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8234H01L21/8238H01L21/822H01L27/088H01L27/092H01L27/04
Inventor 陈荣庆游纯青
Owner UNITED MICROELECTRONICS CORP
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