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Thin film transistor display device and method of manufacturing the same

A technology of thin-film transistors and display devices, which is applied in the field of semi-transmissive and semi-reflective liquid crystal displays and their manufacturing, and can solve problems affecting product qualification rate, particle pollution, multi-hour cost, labor cost and machine purchase cost, etc.

Inactive Publication Date: 2012-07-04
INNOLUX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the manufacturing process of thin film transistor display devices, every manufacturing process has the opportunity to cause particle pollution, which affects the yield of products
And each manufacturing process costs a lot of man-hour cost, labor cost and machine purchase cost

Method used

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  • Thin film transistor display device and method of manufacturing the same
  • Thin film transistor display device and method of manufacturing the same
  • Thin film transistor display device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1 of the present invention uses a half-tone photomask to define the electrodes in the light-transmitting region and the electrodes in the reflecting region, so that the number of photomasks in the manufacturing process is reduced. Figure 1A-1L A flowchart showing a manufacturing method of a TFT display device of a transflective display according to Embodiment 1 of the present invention. The TFT display device of the transflective display in this embodiment has a pixel area A2 composed of a light-transmitting area A23 and a reflecting area A25. The thin film transistor display device also has a pixel interval area A3, which surrounds the light-transmitting area A23 and the reflecting area A25.

[0017] First, if Figure 1A As shown, a gate electrode 13, a gate insulating layer 14, a channel layer 15, a heavily doped ohmic contact layer 16, a source metal layer 17 and a drain metal layer are formed. 18 on the substrate 11. Wherein, the source metal layer 17 ...

Embodiment 2

[0023]In the second embodiment of the present invention, a half-tone photomask is used to define the via hole and the electrode in the reflective region. In terms of operation steps, the difference between the manufacturing method of the thin film transistor display device of this embodiment and the manufacturing method of the thin film transistor display device of the first embodiment lies in the step after forming the passivation layer, and the difference of the structure of the thin film transistor display device is that The structure of the via hole and the reflective area, and the rest of the same structure will not be repeated.

[0024] Please refer to Figure 2A-2J A flowchart showing a manufacturing method of a TFT display device of a transflective display according to Embodiment 2 of the present invention. First, if Figure 2A As shown, the gate 13, the gate insulating layer 14, the channel layer 15, the heavily doped ohmic contact layer 16, the source metal layer 1...

Embodiment 3

[0029] In the third embodiment of the present invention, a half-tone photomask is used to define the via hole and the electrode in the reflective region. The manufacturing method of the thin film transistor display device of this embodiment is different from the manufacturing method of the thin film transistor display device of the second embodiment in the step after coating the photoresist, and the structure of the thin film transistor display device is different in the structure of the reflective region, The rest of the similarities will not be repeated.

[0030] Please refer to Figure 3A ~ 3I A flowchart showing a manufacturing method of a thin film transistor display device of a transflective display according to Embodiment 3 of the present invention. First, if Figure 3A As shown, the gate 13, the gate insulating layer 14, the channel layer 15, the heavily doped ohmic contact layer 16, the source metal layer 17 and the drain metal layer 18, and the passivation layer ar...

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Abstract

The invention relates to a thin-film transistor display element and a method for manufacturing the same. The thin-film transistor display element is arranged in a half-penetration and half-reflection display, the thin-film transistor display is provided with a light transmission zone and a reflection zone. Firstly, a grid is formed on a base plate; secondly, a grid insulating layer is formed to cover the grid; thirdly, a groove layer is formed on the grid insulating layer; fourthly, a heavy mixing ohm contact layer is formed on the groove layer; fifthly, a source metal layer and a drain metallayer are formed on the heavy mixing ohm contact layer; sixthly, a passivation layer is formed to cover on the grid, the source metal layer and the drain metal layer; seventhly, a via hole is formed to run through the passivation layer to expose the partial surface of the drain metal layer; eighthly, a light transmission zone electrode is formed over the passivation layer of the light transmission zone; finally, a light reflection zone electrode is formed over the passivation layer of the reflection zone. A semi-color light adjustment mask is used to define two of the via hole, the light transmission zone electrode and the light reflection zone electrode.

Description

technical field [0001] The invention relates to a transflective liquid crystal display and a manufacturing method thereof, and in particular to a thin film transistor display device of a transflective liquid crystal display and a manufacturing method thereof. Background technique [0002] Thin Film Transistor displaying device (Thin Film Transistor displaying device, TFT displaying device) is one of the important devices of liquid crystal display. Each thin film transistor display device can drive the liquid crystal of the liquid crystal display to rotate, so that the light passing through the liquid crystal is refracted and combined to form a display screen. [0003] The light source of the transflecrive display device can be provided by the external light source and the backlight module (Backlight module) inside the display at the same time. Compared with fully transmissive displays, transflective displays can reduce power usage. Moreover, compared with the total reflect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L27/12G02F1/136
Inventor 许博文
Owner INNOLUX CORP
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