Non-volatile storage and its producing method

Abstract

Non-volatile memory is composed of substrate, multiple main body layers, multiple control grids, multiple floating grids, and multiple doping areas. An insulating layer is on surface of the substrate. Being setup on the substrate, the main body layers in paralleled strips are arranged and extended along the first direction. Being setup on the substrate, the control grids in paralleled strips are arranged and extended along the second direction. The second direction and the first direction are staggered. Moreover, the control grids are filled to gaps of the main body layers along the second direction. The floating grids are setup between control grids and the main body layers. The doping areas are setup in main body layers between control grids.

Description

technical field [0001] The invention relates to a semiconductor element and its manufacturing method, in particular to a non-volatile memory and its manufacturing method. Background technique [0002] The flash memory (Flash) in the non-volatile memory has become one of the mainstream research in the industry due to its fast and time-saving operation mode and cost advantages. A typical flash memory device is mainly composed of a floating gate (Floating Gate) and a control gate (Control Gate). Separated by a dielectric layer, and separated by a tunnel oxide layer (Tunnel Oxide) between the floating gate and the substrate. [0003] Currently, flash memory arrays commonly used in the industry include a NOR gate (NOR) array structure and a NAND gate (NAND) array structure. In the flash memory structure of a NAND array, each memory cell is connected in series, and each column of memory cells is usually isolated by a shallow trench isolation (STI) structure. Its integration and...

AI Technical Summary

Problems solved by technology

In this way, the impact of the short channel effect (Short Channel Effect) will be more significant, which will not only change the enabling voltage (Vt) of the memory, cause problems with the switching of the gate voltage (Vg) control channel, but also cause hot electrons Effect and Punch Through effect, leakage current is generated in the channel, or Electrical Breakdown phenomenon occurs

These situations are very detrimental to the stability and reliability of the memory

[0005] In addition, due to the reduction in the size of the memory cell, the area of ​​the capacitor between the control gate and the floating gate is also reduced, which leads to a decrease in the coupling coefficient of the control gate. When operating the memory cell, it is necessary to apply more high voltage is enough

The increase of operating voltage is likely to cause problems such as heat dissipation and noise, and will also increase power consumption

[0006] Furthermore, although the shallow trench isolation structure has the function of isolating each memory cell column, the fabrication of the shallow trench isolation structure requires photolithography and etching process, which not only increases the manufacturing cost, but also lengthens the entire manufacturing process. Increased speed will also be hindered

Images