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Light emitting diode having InO layer and method for manufacturing the same

A technology of light-emitting diodes and indium tin oxide layers, which is applied in the direction of transmission devices, mechanical equipment, and electrical solid devices, can solve problems such as poor electrical characteristics, achieve increased contact area, improve diffusion efficiency, and improve brightness and luminous performance Effect

Active Publication Date: 2010-01-13
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the ITO layer has poor electrical properties compared with the existing Ni / Au layer, further improvements are required

Method used

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  • Light emitting diode having InO layer and method for manufacturing the same
  • Light emitting diode having InO layer and method for manufacturing the same
  • Light emitting diode having InO layer and method for manufacturing the same

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Embodiment Construction

[0028] Best Mode for Carrying Out the Invention

[0029] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following examples are provided for illustrative purposes only, so as to fully convey the scope of the present invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments set forth herein, but may be embodied in various forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience of illustration. Like reference numerals refer to like elements throughout the specification and drawings.

[0030] figure 1 is a sectional view showing a light emitting diode according to a first embodiment of the present invention.

[0031] The light emitting diode 1 according to the first embodiment of the invention is an AC light emitting diode operating under AC conditions. Sakai et al. have disclosed a conven...

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Abstract

The invention a light emitting diode with improved brightness and lighting performance due to improved effect of spread of electric current to ITO layer and method manufacturing the same. According to the invention, at least one light emitting unit that includes an N type semiconductor, a resource layer and a P type semiconductor layer on a substrate is manufactured. The method of the invention includes the steps of: (a) forming at least one light emitting unit having an ITO layer formed on a top surface of the P type semiconductor layer; (b) forming a contact groove for wiring in the ITO layer through dried etching; (c) filling the contact groove by a contact connection portion for wiring made of conductive materials.

Description

technical field [0001] The present invention relates to a light emitting diode having a transparent indium tin oxide layer as an electrode layer and a method of manufacturing the light emitting diode, and more particularly to a light emitting diode having improved A light-emitting diode with brightness and luminous properties and a method for manufacturing the light-emitting diode. Background technique [0002] A light emitting diode is a photoelectric conversion device having a structure in which an N-type semiconductor and a P-type semiconductor are combined, and emits light by recombination of electrons and holes. As an example, GaN-based light emitting diodes are known as such light emitting diodes. GaN-based light-emitting diodes include light emitting cells each having an N-type semiconductor layer made of GaN-based material and sequentially formed on a substrate made of sapphire, silicon, etc., an active layer (active layer) (or light-emitting layer) and P-type semi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/36
CPCH01L2924/0002H01L2924/00F16H3/70
Inventor 金大原尹丽镇吴德焕金种焕
Owner SEOUL VIOSYS CO LTD