Gallium nitride crystal substrate and method of producing same
A gallium nitride and substrate technology, applied in the field of low-distortion gallium nitride crystal substrates, can solve problems such as uneven epitaxial layers and uniform epitaxial layers that hinder the growth of GaN wafers
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Embodiment 1
[0074] The lower substrate was a GaN / sapphire substrate manufactured by epitaxially growing a GaN layer with a thickness of 2 μm by the MOCVD method on a sapphire single crystal substrate with a width of 5.08 cm and a thickness of 0.4 mm. Silicon dioxide (SiO 2 ) mask pattern A of the film. GaN crystals were grown by MOCVD on a masked GaN / sapphire lower substrate under certain growth conditions, the growth conditions being 1030°C growth temperature, 2.53Pa TMG gas partial pressure, 5.07kPa NH 3 gas partial pressure, and a growth time of 50 hours.
[0075] GaN crystals with a thickness of 0.2 mm were grown by MOCVD. A GaN wafer with a thickness of 0.15 mm was cut from the grown crystal. The GaN wafer was observed by a fluorescence microscope. The existence of low dislocation single crystal region (Z), c-plane growth region (Y), bulky defect accumulation region (H), c-axis coarse core region (F) and random defect bundle region (G) was confirmed by fluorescence microscope obs...
Embodiment 2
[0079] The lower substrate was a sapphire single crystal substrate with a diameter of 5.08 cm and a thickness of 0.4 mm. Fabrication of silicon dioxide (SiO2) on a sapphire lower substrate by sputtering and etching 2 ) film mask pattern B ( Figure 4 ). Under certain growth conditions, GaN crystals were grown on the masked sapphire lower substrate by HVPE method, the growth conditions were growth temperature of 1050°C, GaCl gas partial pressure of 3.04kPa, NH of 35.5kPa 3 Gas partial pressure, 20 hr growth time.
[0080] HVPE growth produced GaN crystals with a thickness of 2.4mm. A GaN wafer with a thickness of 0.45 mm was cut from the grown crystal. The GaN wafer was observed by a fluorescence microscope. It was confirmed by fluorescence microscopy that there are low dislocation single crystal regions (Z), C-plane growth regions (Y), bulky defect accumulation regions (H), c-axis coarse core regions (F) and random defect bundle regions (G). The GaN substrate of Example ...
Embodiment 3
[0084] The GaN crystal of Example 3 was produced by the HVPE method, and the manufacturing conditions were similar to those of Example 2 except for the mask pattern. Embodiment 3 adopts such as Figure 5 Another mask pattern C (stripe mask) is shown instead of pattern B of Example 2 ( Figure 4 ). GaN crystals with a thickness of 2.4 mm were produced by HVPE growth. A GaN substrate with a thickness of 0.45 mm is obtained by cutting the grown GaN crystal. The GaN wafer of Example 3 includes a low dislocation single crystal region (Z), a C-plane growth region (Y), a bulky defect accumulation region (H), a c-axis coarse core region (F) and a random defect bundle region (G). The density of the c-axis coarse nuclear region (F) with a diameter of less than 1mm (d2 . In Example 3, the density of random defect bundle regions (G) with a diameter less than 500 μm (d2 . The GaN wafer has a radius of curvature of 530 cm, which corresponds to a small deformation. Table 1 shows the re...
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