Semiconductor part

Abstract

A CMOS device has PMOS and NMOS transistors with different gate structures overlying a semiconductor device. A first gate structure overlying the PMOS device region has a first gate dielectric layer overlying the semiconductor substrate, and a first gate conductor overlying the first gate dielectric layer. A second gate device region overlying the NMOS device region has a second gate dielectric layer overlying the semiconductor substrate, and a second gate conductor overlying the first gate dielectric layer. The first gate conductor has a silicon-based material layer, and the second gate conductor has a metal-based material layer. The semiconductor device balances the working function to increase the performance of CMOS device.

Description

technical field [0001] The present invention relates to a complementary metal oxide semiconductor (CMOS) circuit, and in particular to a p-channel metal oxide semiconductor (p-channel metal oxide semiconductor) having a different gate structure; PMOS) transistors and N-channel metal oxide semiconductor (n-channel metal oxide semiconductor; NMOS) transistors. Background technique [0002] Complementary metal-oxide-semiconductor (CMOS) technology is widely used in today's integrated circuit manufacturing, which usually forms an N-channel metal-oxide-semiconductor (NMOS) and a P-channel metal-oxide-semiconductor (NMOS) in a semiconductor substrate PMOS) transistors. In a conventional CMOS device with NMOS and PMOS transistors, the gate dielectric layer is usually formed of silicon dioxide and the gate conductor is formed of polysilicon with opposite doping patterns. That is to say, the gate structures of the NMOS and PMOS transistors have the same material and thickness of th...

AI Technical Summary

Problems solved by technology

It is difficult to find suitable metal gates for NMOS and PMOS transistors on the same gate dielectric material

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