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Magnetic recording element and magnetic memory

一种磁性存储器、磁性记录的技术，应用在静态存储器、只读存储器、数字存储器信息等方向，能够解决热波动阻抗和再现信号幅度输出恶化等问题

Inactive Publication Date: 2008-01-02
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the saturation magnetization Ms of the general-purpose magnetic recording element is reduced, new problems arise therein, that is, thermal fluctuation resistance and reproduction signal amplitude output deterioration

Method used

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  • Magnetic recording element and magnetic memory
  • Magnetic recording element and magnetic memory
  • Magnetic recording element and magnetic memory

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0064] 1A and 1B are side views showing the structure of the magnetic recording element of the first embodiment.

[0065] The magnetic free layer 11 has variable magnetization, and the direction of the easy axis of magnetization thereof is in a direction perpendicular to the film plane. The magnetic pinned layer 12 has magnetization fixed in a direction perpendicular to the film plane. A non-magnetic barrier layer 13 is provided between the magnetic free layer 11 and the magnetic pinned layer 12.

[0066] The magnetic free layer 11 is composed of a magnetic material in which the relationship between the saturation magnetization Ms (emu / cc) and the anisotropic magnetic field Han (Oe) satisfies Han>12.57Ms and Han-1 +12.57Ms, and its thickness is 5nm or less.

[0067] The magnetic pinned layer 12 is composed of a magnetic material. Due to, for example, the antiferromagnetic layer, the magnetization direction of the magnetic pinned layer 12 is fixed. The non-magnetic barrier layer 13...

no. 3 example

[0085] 5A and 5B are side views showing the structure of the magnetic recording element of the third embodiment.

[0086] The magnetic free layer 11 has variable magnetization, and the direction of the easy axis of magnetization is a direction perpendicular to the film plane. The magnetic pinned layer 12 has a fixed magnetization in a direction perpendicular to the film plane. A non-magnetic barrier layer 13 is provided between the magnetic free layer 11 and the magnetic pinned layer 12, and an insertion layer 14 is provided between the magnetic free layer 11 and the non-magnetic barrier layer 13.

[0087] The magnetic free layer 11 is composed of a magnetic material, in which the relationship between the saturation magnetization Ms (emu / cc) and the anisotropic magnetic field Han (Oe) satisfies Han>12.57Ms and Han-1 +12.57Ms, and its thickness is 5nm or less.

[0088] Also, the insertion layer 14 is composed of a magnetic material, and its saturation magnetization Ms is set to a v...

no. 4 example

[0099] 12 to 14 are views showing the structure of the magnetic recording element of the fourth embodiment.

[0100] The magnetic free layer 11 is composed of magnetic fine particles 101 spatially separated from the non-magnetic material 16, the magnetization of the magnetic fine particles 101 is variable, and the direction of the easy axis of magnetization is in the direction perpendicular to the film plane.

[0101] The magnetic pinned layer 12 has a fixed magnetization in a direction perpendicular to the film plane. A non-magnetic barrier layer 13 is provided between the magnetic free layer 11 and the magnetic pinned layer 12. A cap layer 15 is provided on the magnetic free layer 11.

[0102] The magnetic fine particles 101 are composed of a magnetic material in which the relationship between the saturation magnetization Ms (emu / cc) and the anisotropic magnetic field Han (Oe) satisfies Han>12.57Ms and Han-1 +12.57Ms, and its thickness is 10nm or less.

[0103] The magnetic pinned...

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Abstract

A magnetic recording element according to an example of the present invention includes a magnetic free layer whose magnetization is variable in accordance with a current direction passing through a film and whose direction of easy axis of magnetization is a direction perpendicular to a film plane, a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane, and a non-magnetic barrier layer between the magnetic free layer and the magnetic pinned layer. In the magnetic free layer, a relation between a saturated magnetization Ms (emu / cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han<1.2 E 7 MS<-1>+12.57 Ms.

Description

Technical field [0001] The present invention relates to a magnetic recording element and a magnetic memory using magnetization reversal caused by spin-polarized electrons. Background technique [0002] In recent years, research and development of spintronics devices using electronic rotation degrees of freedom have been actively carried out. [0003] For example, in a hard disk drive, the magnetization state of the recording medium is controlled by a magnetic field from a magnetic head, while in a magnetic random access memory, the magnetization state of a magnetoresistive element is controlled by a composite magnetic field from two recording lines. [0004] This method of using a magnetic field to control the magnetization state has a long history, and it has become a well-known technique. [0005] On the other hand, due to the latest advances in nanotechnology, the miniaturization of recording units and magnetoresistive elements of recording media has been improved, and therefo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22G11C11/16H01F10/32H10N50/10
CPCH01F10/3227H01L27/222H01F10/3286H01L27/228B82Y25/00G11C16/16G01R33/093H01L43/10H01F10/3254H10B61/00H10B61/22H10N50/85H10N50/10H10N50/20
Inventor 中村志保森濑博史
Owner KK TOSHIBA
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