Electronic structure and method for forming medium film
A dielectric film and dielectric technology, applied in circuits, electrical components, electro-solid devices, etc., can solve the problems of reduced cohesive strength and increased pressure.
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example 1
[0098] Example 1; First method embodiment
[0099] In this example, a porous SiCOH material with a dielectric constant K=2.4 was fabricated in a two-step process. In the deposition step, selected has a low boiling point, low cost, and provides for the formation of Si-[CH 2 ] n A cyclocarbosilane or oxycarbosilane precursor for -Si bonding. Specifically, 1,1-dimethyl-1-silacyclopentane was used. The conditions used in the deposition step included a flow rate of the carbosilane 1,1-dimethyl-1-silacyclopentane precursor of 8 sccm and an oxygen (O 2 ). The substrate was placed in the reaction chamber and the precursor flow rate was stabilized to bring the reaction chamber pressure to 0.5 Torr. Set the temperature of the wafer chuck to about 180°C. RF power at a frequency of 13.6 MHz was applied at a power of 30 W. After deposition, the film was annealed at 430°C for 4 hours, and a dielectric constant of 2.4 was measured at 150°C. Often, other high-energy post-treatment (or...
example 2
[0104] Example 2; second method embodiment
[0105] In this example, a porous SiCOH material with K=2.4 was fabricated in a two-step process. In the deposition step, two precursors are used. selected to have a low boiling point, low cost, and provide the ability to form Si-[CH 2 ] n -Si bonded ring precursor. The cyclocarbosilane precursor used was 1,1-dimethyl-1-silacyclopentane. Bicycloheptadiene (BCHD) was used as the second precursor and as porogen in this method. The conditions used in the deposition step included a 1,1-dimethyl-1-silacyclopentane precursor flow rate of 5 sccm with 2 sccm of BCHD and 0.5 sccm of oxygen (O 2 ). The substrate was placed in the reaction chamber and the precursor flow rate was stabilized to bring the reaction chamber pressure to 0.5 Torr. Set the temperature of the wafer chuck to about 180°C. RF power at a frequency of 13.6 MHz was applied at a power of 50 W. After deposition, the film was annealed at 430°C for 4 hours, and the FTIR ...
example 3
[0107] Example 3; The third method embodiment
[0108] In this example, three precursors were used in a two-step process to fabricate porous structures with K greater than or equal to 1.8 and with enhanced Si-R-Si bridging carbon or other organofunctional bridging between two Si atoms. SiCOH material. Here, use R to represent such as CH 2 , CH 2 -CH 2 , CH 2 -CH 2 -CH 2 or more regular [CH 2 ] n bridging organic groups. In the deposition step, three precursors are used, one of which is a hydrocarbon porogen (used according to methods known in the art). The porogen can be bicycloheptadiene (BCHD), hexadiene (HXD) or other molecules such as those described in US Pat. Another precursor used in this example is the SiCOH scaffold precursor DEMS (diethoxymethylsilane). selected to provide the desired amount of Si-[CH 2 ] n The third precursor for the bond in the -Si form is 1,1-dimethyl-1-silacyclopentane, although other cyclocarbosilanes can be used, including methyl-1...
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