Non-volatile memory devices including dummy word lines and related structures and methods

Abstract

A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string on the active region. The first memory cell string may include a first plurality of word lines crossing the active region between a first ground select line and a first string select line, and about a same first spacing may be provided between adjacent ones of the first plurality of word lines. The second memory cell string may include a second plurality of word lines crossing the active region between a second ground select line and a second string select line, and about the same first spacing may be provided between adjacent ones of the second plurality of word lines. Moreover, the first ground select line may be between the second ground select line and the first plurality of word lines, and the second ground select line may be between the first ground select line and the second plurality of word lines. Moreover, portions of the active region between the first and second ground select lines may be free of word lines, and a second spacing between the first and second ground select lines may be at least about 3 times greater than the first spacing. Related methods are also discussed.

Description

[0001] Related application [0002] According to 35 U.S.C. §119, this U.S. non-provisional patent application claims the priority of Korean Patent Application No. 10-2006-0065040 filed on July 11, 2006, so the entire disclosure is incorporated herein by reference. Technical field [0003] The present invention relates generally to electronic equipment, and more specifically to electrical storage devices and related methods. Background technique [0004] A nonvolatile memory device, such as a flash memory device, can be provided in a NOR-type structure or a NAND-type structure. For example, NOR-type flash memory devices can provide faster random access, and NAND-type flash memory devices can provide lower cost and / or higher integration. Therefore, NOR-type flash memory devices can be used for code memory storage, and NAND-type flash memory devices can be used for mass memory storage. [0005] For example, in US Patent No. 7,079,437 entitled "Nonvolatile Semiconductor Memory Device ...

AI Technical Summary

Problems solved by technology

[0006] Although non-volatile memory devices are known, there remains a need for techniques that provide structures and methods of more highly integrated memory devices

Images