Chemical mechanism grinding and finishing device

A dressing device, chemical mechanical technology, applied in the direction of abrasive surface adjustment devices, grinding machine parts, grinding/polishing equipment, etc., can solve problems such as contamination of wafer 15 defects

Inactive Publication Date: 2008-02-06
POWERCHIP SEMICON CORP
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

What's more, a dirty polishing pad 12 can contaminate the surface of the wafer 15 to increase its defects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanism grinding and finishing device
  • Chemical mechanism grinding and finishing device
  • Chemical mechanism grinding and finishing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Some typical embodiments embodying the features and advantages of the present invention will be described in detail in the description in the following paragraphs. It should be understood that the invention is capable of various changes in various ways without departing from the scope of the invention, and that the description and diagrams are illustrative in nature rather than limiting the invention.

[0035] Please refer to FIG. 2 , which shows a grinding and dressing device attached to a chemical mechanical grinding retaining ring (Retaining Ring) according to a preferred embodiment of the present invention. As shown in the figure, include retaining ring (RetainingRing) 21, in order to insert wafer, to carry out chemical mechanical grinding on polishing pad; At the same time, the polishing pad is trimmed to maintain good polishing efficiency of the polishing pad. In actual application, the plurality of trimmers 22 may be composed of a plurality of diamond disks (Dia...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an abrading device for a chemico-mechanical milling which comprises a retaining ring for nesting wafer and carrying out the chemico-mechanical milling on a polishing pad, and a plurality of dressers which are arranged around the bottom of the retaining ring for polishing the wafer and modifying the polishing pad and keeping the polishing efficiency of the polishing pad.

Description

technical field [0001] The invention relates to a dressing device (Dresser) applied to chemical mechanical grinding, in particular to a dressing device attached to a chemical mechanical grinding retaining ring (Retaining Ring). Background technique [0002] As the line width of the semiconductor manufacturing process becomes finer and thinner, the flatness requirements for thin film deposition in the wafer manufacturing process are also getting higher and higher, and the copper manufacturing process is also widely used. Chemical Mechanical Polishing (CMP) equipment has become In recent years, the increasingly critical manufacturing steps in the semiconductor manufacturing process, the equipment market demand has also grown rapidly. The CMP equipment market has grown rapidly in recent years, mainly due to the main advantages of the CMP process compared with the traditional wafer planarization method: 1. Because the surface after CMP grinding is flatter, better quality exposur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02B24B53/12H01L21/304H01L21/463
Inventor 庄志豪邱丞伟庄千莹
Owner POWERCHIP SEMICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap