Method for manufacturing single level polysilicon electric removal and programmable read only memory cell

Abstract

The present invention relates to a method for producing storage cell characterized in depletion type, single layer, polysilicion, electrical erase and programme read only. The method includes the steps as follows: providing a substrate which consists of a floating area and a control area, forming a separated pit area and a pit area respectively in the substrate of the floating area and the control area; next, establishing a well region and a separated well region respectively in the separated pit area and the substrate between the separated pit area and the well region; forming a depletion dope area and a storage cell injecting area respectively in the well area and the pit area; constructing a floating grid which crosses the floating area and the control area on the substrate. Wherein, the floating grid exposes part of the depletion dope area as well as part of the storage cell injecting area; finally, carrying out a technique of doping for the aim of forming a source electrode or drain electrode area and a heavy dope area respectively in the exposed part of the depletion dope area and the storage cell injecting area.

Description

technical field [0001] The present invention relates to a non-volatile memory cell, its forming method and operation method, and in particular to a single-poly EEPROM cell (single-poly EEPROM cell), its manufacturing method and its operation method. Background technique [0002] With the popularity of consumer electronic products, non-volatile memory (non-volatile memory), which can retain stored data and data even when the power is turned off, is widely used in various electronic devices , including multimedia or portable multimedia application devices, such as digital cameras, walkmans, or portable phones. The integration process of non-volatile memory with other devices, such as CMOS, logic device, high voltage device and low voltage device, has become one of the current manufacturing development trends. [0003] The existing Electrically Erasable Programmable Read-Only Memory (EEPROM) is a non-volatile memory. A general EEPROM cell has two stacked gates, including a f...

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Problems solved by technology

[0004] Since the existing EEPROM has two stacked polysilicon gates, its step height is greater than that of other single-layer polysilicon devices, so the EEPROM is added. Difficulties in integrating process with other components

In addition, in order to integrate the two-layer polysilicon EEPROM and the single-layer polysilicon device, more photomasks are required and the process steps are more complicated.

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