Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Brain-like device capable of carrying out memory enhancement and cognitive identification of nerve cells, and preparation method thereof

A neuron and memory technology, applied in the biological neural network model, physical realization, etc., can solve the problems of low computing speed, electrical signal transmission stimulation, simple structure, etc., and achieve the effect of reducing loss and ingenious preparation process

Active Publication Date: 2017-09-15
NANJING UNIV OF POSTS & TELECOMM
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two artificial synapse technologies use electrical signals to transmit stimulation. Compared with the human brain, the power consumption is large, the calculation speed is low, the structure is simple, and the function is limited, which cannot be well adapted to the rapidly developing market.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Brain-like device capable of carrying out memory enhancement and cognitive identification of nerve cells, and preparation method thereof
  • Brain-like device capable of carrying out memory enhancement and cognitive identification of nerve cells, and preparation method thereof
  • Brain-like device capable of carrying out memory enhancement and cognitive identification of nerve cells, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be further explained below in conjunction with the embodiments and the drawings of the specification.

[0039] figure 1 , figure 2 The structure diagram of the silicon substrate suspended LED optical waveguide integrated photonic device of the present invention is given. The device uses a Si substrate GaN-based wafer as a carrier and includes a silicon substrate layer 1, an epitaxial layer disposed on the silicon substrate layer 1 The buffer layer 2, the n-GaN layer 3 arranged on the epitaxial buffer layer 2, the emitter and the collector arranged on the n-GaN layer 3, the upper surface of the n-GaN layer 3 is etched The stepped mesa includes a lower mesa and a plurality of upper mesas 9 located on the lower mesa. The lower mesa has grooves etched downward and prominently forms the waveguide 8, so The described emitter and collector have the same structure, and both include an upper mesa 9 and an n-GaN layer 3, an InGaN / GaN quantum well 4, a p-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a brain-like device capable of carrying out memory enhancement and cognitive identification of nerve cells, and a preparation method thereof. The device takes an Si substrate GaN base wafer as a carrier and comprises a silicon substrate layer, an epitaxy buffer layer arranged on the silicon substrate layer, an n-GaN layer arranged on the epitaxy buffer layer, an emitting electrode and a collector electrode, wherein the emitting electrode and the collector electrode are arranged on the n-GaN layer and have the same structure; the emitting electrode and the collector electrode independently comprise an upper table board, the n-GaN layer, an InGaN / GaN quantum well, a p-GaN layer and a p-electrode, wherein the n-GaN layer, the InGaN / GaN quantum well, the p-GaN layer and the p-electrode are connected in sequence and are arranged on the upper table board; the emitting electrode is independently connected with the collector electrode through waveguide; and a hollow cavity is arranged below the n-GaN layer to enable a photo-induced synapsis transistor and the waveguide to hang in the air. By use of the device, photons can be used for replacing electrons or protons to serve as an information carrier to simulate the transmission of neurotransmitters, the time accumulation, the spatial accumulation and the time-space mixing accumulation of a human brain as well as an identification effect can be simulated, and a foundation is laid for researching complex brain memory characteristics.

Description

Technical field [0001] The invention belongs to the field of life sciences and semiconductor devices, and relates to a brain-like device for memory enhancement and cognitive recognition of neurons and its preparation technology. Background technique [0002] In 2000, Gerald M. Edelman, the Nobel Prize winner in Physiology or Medicine, said that the knowledge of brain science will lay the foundation for the coming new era. At present, human brain scientific research is receiving more and more attention from all over the world. Governments all over the world put forward their own "Brain Project": In 2013, the European Union launched the "Human Brain Project", which focuses on medical, neuroscience and Computer technology; in the same year, the United States launched the "BRAIN Initiative" to develop and explore the brain to obtain new discoveries in brain science; in China, the Chinese Academy of Sciences proposed the "Chinese Brain Project" in 2014, based on exploring the mysterie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/067
CPCG06N3/0675
Inventor 王永进朱桂遐杨永超李永航袁佳磊蔡玮
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products