The invention discloses a brain-like device capable of carrying out memory enhancement and cognitive identification of
nerve cells, and a preparation method thereof. The device takes an
Si substrate GaN base
wafer as a carrier and comprises a
silicon substrate layer, an
epitaxy buffer layer arranged on the
silicon substrate layer, an n-GaN layer arranged on the
epitaxy buffer layer, an emitting
electrode and a collector
electrode, wherein the emitting
electrode and the collector electrode are arranged on the n-GaN layer and have the same structure; the emitting electrode and the collector electrode independently comprise an upper table board, the n-GaN layer, an InGaN / GaN
quantum well, a p-GaN layer and a p-electrode, wherein the n-GaN layer, the InGaN / GaN
quantum well, the p-GaN layer and the p-electrode are connected in sequence and are arranged on the upper table board; the emitting electrode is independently connected with the collector electrode through
waveguide; and a hollow cavity is arranged below the n-GaN layer to enable a photo-induced
synapsis transistor and the
waveguide to hang in the air. By use of the device, photons can be used for replacing electrons or protons to serve as an information carrier to simulate the transmission of neurotransmitters, the time accumulation, the spatial accumulation and the time-space mixing accumulation of a
human brain as well as an identification effect can be simulated, and a foundation is laid for researching complex brain memory characteristics.