Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Minitype detecting device for monitoring solar ultraviolet index

A technology of ultraviolet index and detection device, which is applied in the direction of using electric radiation detectors for photometry, measuring circuits, electrical components, etc., can solve the problems of inconvenient monitoring and mastering of ultraviolet radiation intensity, inability to provide ultraviolet index in a timely manner, and high cost.

Inactive Publication Date: 2008-02-13
NANJING UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Due to differences in regions and time, ultraviolet rays vary greatly. At the same time, the UV index forecast by the Meteorological Bureau cannot provide accurate UV index in a timely manner.
[0008] Existing ultraviolet ray measuring devices are not convenient for individuals to carry, the cost of personal purchase is high, and it is not convenient to monitor and grasp the radiation intensity of ultraviolet rays at any time, and take protective measures in time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Minitype detecting device for monitoring solar ultraviolet index
  • Minitype detecting device for monitoring solar ultraviolet index

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The invention utilizes the GaN-based and AlGaN-based ultraviolet detectors developed by the MOCVD (metal organic chemical vapor phase epitaxy) epitaxial growth system, adopts the drive circuit chip designed by the integrated circuit, and the miniaturized sound, image and light display system. Specifically include the following steps:

[0022] 1. GaN-based and AlGaN-based ultraviolet detectors developed by MOCVD (metal organic chemical vapor phase epitaxy) epitaxial growth system. The detector chip size is less than 2-3mm, that is, 4-9mm 2 ; It has response characteristics within the appropriate bandwidth of 290nm-400nm including ultraviolet A and ultraviolet B spectral lines.

[0023] 2. The typical structure of AlGaN-based ultraviolet detector is: GaN-based ultraviolet detector or AlGaN-based ultraviolet detector; one of the structures is AlGaN-based resonance-enhanced monochromatic ultraviolet detector, with a thickness of 50-2000nm on the sapphire substrate Low-tem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A micro detection device for monitoring sunlight ultraviolet index is provided, making use of a GaN based and AlGaN based micro ultraviolet detector, a chip with the size less than 2-3mm2 and the response characteristics within a bandwidth of a spectrum line range with 290nm-400nm wavelength, including ultraviolet A and ultraviolet B. The human signals of the detector is amplified and output by a driving circuit. The driving circuit consists of an amplifying circuit and an AD conversion, signal processing and displaying circuit. The detector is connected with the amplified circuit first, and then is connected with the AD conversion, signal processing and displaying circuit. With the miniaturized GaN based or AlGaN based structured micro ultraviolet detector, the invention has the characteristics of adjustable and continuous band gap, proper bandwidth and fast response speed to the ultraviolet. The sunlight ultraviolet intensity can be directly and properly displayed through a micro amplified integrated circuit and a micro display output device.

Description

1. Technical field [0001] The invention relates to a new type of miniature detection device for monitoring the ultraviolet index of sunlight, especially the use of GaN-based and AlGaN-based miniature ultraviolet detectors, 2. Background technology [0002] When the skin is irradiated by ultraviolet rays, melanocytes in the epidermis of the human body begin to produce melanin to absorb ultraviolet rays to prevent skin damage. Prolonged exposure to ultraviolet rays will cause a large amount of melanin to deposit in the epidermis, becoming permanent "sun tan" marks. The ozone layer in the atmosphere protects life on Earth from the sun's harsh ultraviolet rays. [0003] In recent years, due to the increasingly serious destruction of atmospheric stratospheric ozone, the depletion of the ozone layer has increased the ultraviolet radiation reaching the earth's surface, and the amount of ultraviolet radiation received by the ground has increased. Excessive exposure to ultraviolet ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01J1/44H01L31/105
Inventor 谢自力张荣胡立群韩平江若琏修向前刘斌赵红朱顺明顾书林施毅郑有炓
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com