All-inorganic perovskite single crystal with tunable band gap and its growth method

A growth method and perovskite technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of no reports of all-inorganic perovskite series bulk crystals, and achieve improved crystal quality and optical transparency. The effect of over-rate, large size and high purity

Active Publication Date: 2021-11-30
SHANDONG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After searching, most of the current reports are organic-inorganic hybrid perovskite materials related to methylamino-based mixed halogens. However, there is no report on Cs-based mixed halogen-based all-inorganic perovskite series bulk crystals.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • All-inorganic perovskite single crystal with tunable band gap and its growth method
  • All-inorganic perovskite single crystal with tunable band gap and its growth method
  • All-inorganic perovskite single crystal with tunable band gap and its growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] CsPbCl 3 Crystal growth method, the steps are as follows:

[0039] (1) Take 8.4180g CsCl and 13.9055g PbCl 2 Place in a mortar, mix well and grind thoroughly, transfer to a quartz tube and evacuate to 10 -4 Pa and sealed, the sealed raw materials were placed in a single-temperature zone well-type furnace for high-temperature sintering. The sintering process was as follows: the temperature was raised to 630 °C for 6 h, kept for 24 h, and cooled to room temperature for 12 h to obtain a pure phase perovskite. Ore crystal polycrystalline material;

[0040] (2) Take the pure-phase perovskite crystal polycrystalline material and put it into a crystal growth quartz crucible, and evacuate to 10-4 Pa and sealed, put into the growth chamber of the double temperature zone Bridgman furnace,

[0041] (3) Turn on the heating device to heat the high-temperature zone and low-temperature zone of the growth chamber of the dual-temperature zone Bridgman furnace. The crystal growth q...

Embodiment 2

[0049] CsPbCl 2.5 Br 0.5 The growth method, carries out by the method for embodiment 1, and difference is:

[0050] Step (1) Take 3.1922g CsBr, 8.3433g PbCl 2 And 2.5254g CsCl is as polycrystalline material synthetic raw material, and polycrystalline material synthetic temperature is 620 ℃,

[0051] Step (3) superheat temperature is 620 °C.

[0052] The resulting CsPbCl 2.5 Br 0.5 Crystal appearance photo as image 3 shown.

[0053] The structure of the Bridgman furnace with two temperature zones is the same as in Example 1.

Embodiment 3

[0055] CsPbCl 1.5 Br 1.5 The growth method of crystal is carried out by the method for embodiment 1, difference is:

[0056] Step (1) Take 4.2562g CsBr, 4.1717g PbCl 2 and 1.8351 g PbBr 2 As a raw material for polycrystalline material synthesis, the polycrystalline material synthesis temperature is 610 °C,

[0057] The superheat temperature in step (3) is 610 °C.

[0058] The resulting CsPbCl 1.5 Br 1.5 Crystal appearance photo as Figure 4 shown.

[0059] The structure of the Bridgman furnace with two temperature zones is the same as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an all-inorganic perovskite single crystal with adjustable band gap and a growth method thereof. In the method, cesium halide and lead halide raw materials are sintered at high temperature in a single temperature zone furnace to obtain pure phase mixed halide perovskite The crystal polycrystalline material is sealed into a quartz crucible, and then placed in the growth chamber of a dual-temperature zone Bridgman furnace for crystal growth. The invention adopts high-temperature zone and low-temperature zone for heating, which can improve the crystallization quality and optical quality of the crystal. The obtained mixed-halogen all-inorganic perovskite single crystal achieves an adjustable bandgap of 1.86-2.88eV, and has excellent application prospects in narrow-bandwidth photodetection and other fields.

Description

technical field [0001] The invention relates to an all-inorganic perovskite single crystal with adjustable band gap and a growth method thereof, belonging to the technical field of crystal growth. Background technique [0002] In recent years, halide perovskite materials have received widespread attention. In addition to being used in solar cells, this type of material also shows excellent application prospects in the fields of photolysis of water, photodetectors, light-emitting diodes, lasers, and nuclear radiation detection. [0003] Halide perovskite materials include organic-inorganic hybrid perovskite materials and all-inorganic perovskite materials. However, the thermal stability of organic-inorganic hybrid perovskite materials is poor, which largely limits its practical production and application; compared with organic-inorganic hybrid perovskite materials, all-inorganic perovskite materials have a high temperature , light and moisture in the air are not sensitive, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B11/00C30B28/02
CPCC30B11/006C30B28/02C30B29/12
Inventor 张国栋张鹏李想陶绪堂
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap