Electric power switching device and its abnormal test method

A power conversion device and abnormal detection technology, which is applied to emergency protection circuit devices, output power conversion devices, measurement devices, etc., can solve problems such as failure to protect, inability to protect, and damage to multiple IGBT components.

Inactive Publication Date: 2008-02-27
HITACHI LTD
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

[0007]However, in the conventional method, the overcurrent is cut off by the IGBT itself, so when the current cutoff function is lost due to a failure of the IGBT itself, etc. , there is a problem that it cannot be protected
Furthermore, there is also a problem that the IGBT cannot be protected when wrong on/off control of the

Method used

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  • Electric power switching device and its abnormal test method
  • Electric power switching device and its abnormal test method
  • Electric power switching device and its abnormal test method

Examples

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Embodiment Construction

[0026] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0027] FIG. 1 is a block diagram showing a configuration example of a power conversion device according to an embodiment of the present invention. The overall structure of one embodiment of this example will be described with reference to FIG. 1 .

[0028] This example has: a control circuit 100 for controlling the operation of the power conversion device; according to the instructions of the control circuit 100, a command pulse generating mechanism, namely a pulse generating circuit 200, which generates a command pulse for instructing the on / off of the IGBT; The command pulse, corresponding to the state of the command pulse, changes the magnitude of the gate voltage applied to the gate of the IGBT, thereby performing the gate drive mechanism for turning on or off the IGBT, that is, the gate drive circuit 400a; the IGBT element 500a; and Abnormality detection circuit...

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Abstract

A power conversion apparatus and a malfunction detection method thereof are provided to prevent a failure of one IGBT(Insulated Gate Bipolar Transistor) device from influencing the damage of the other IGBT device, by detecting abnormality of a gate driving circuit and the IGBT device. A power conversion apparatus uses a plurality of voltage controlled semiconductor devices. A pulse generation part(200) generates a command pulse to control on/off of the voltage controlled semiconductor device, on the basis of a command from a control circuit. A gate driving part(400a) receives the command pulse, and controls on/off operation of the voltage controlled semiconductor device by applying a voltage according to the command pulse as a gate voltage, and outputs a gate feedback signal indicating the on/off state of the voltage controlled semiconductor device. A failure detection part(300) detects a failure, by receiving the command pulse and the gate feedback signal. The failure detection part includes a detection part and a signal generation part for generating a signal to stop the command pulse for the voltage controlled semiconductor device.

Description

technical field [0001] The present invention relates to a power conversion device capable of controlling the conduction state by applying a voltage applied to a control input of the element and performing power conversion using a plurality of voltage-driven semiconductor elements, particularly having a device for detecting an abnormality of the voltage-driven semiconductor element A power conversion device of a mechanism and an abnormality detection method thereof. Background technique [0002] Insulated gate bipolar transistors (Insulated Gate Bipolar Transistor: IGBT) are representative of voltage-driven semiconductor devices, and are widely used in power conversion devices. Hereinafter, in this specification, IGBT is used as the language which refers to the voltage-driven type semiconductor element as a whole, and it demonstrates. [0003] As the protection of the power conversion device, a method of detecting an overcurrent generated by a load short circuit of the power...

Claims

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Application Information

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IPC IPC(8): H02M1/00H02M1/32
CPCG01R31/2607H02H7/1225H02M1/08H03K17/168
Inventor 松田敏彦小林清隆执行正谦
Owner HITACHI LTD
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