Electric power switching device and its abnormal test method

Abstract

A power conversion apparatus and a malfunction detection method thereof are provided to prevent a failure of one IGBT(Insulated Gate Bipolar Transistor) device from influencing the damage of the other IGBT device, by detecting abnormality of a gate driving circuit and the IGBT device. A power conversion apparatus uses a plurality of voltage controlled semiconductor devices. A pulse generation part(200) generates a command pulse to control on / off of the voltage controlled semiconductor device, on the basis of a command from a control circuit. A gate driving part(400a) receives the command pulse, and controls on / off operation of the voltage controlled semiconductor device by applying a voltage according to the command pulse as a gate voltage, and outputs a gate feedback signal indicating the on / off state of the voltage controlled semiconductor device. A failure detection part(300) detects a failure, by receiving the command pulse and the gate feedback signal. The failure detection part includes a detection part and a signal generation part for generating a signal to stop the command pulse for the voltage controlled semiconductor device.

Description

technical field [0001] The present invention relates to a power conversion device capable of controlling the conduction state by applying a voltage applied to a control input of the element and performing power conversion using a plurality of voltage-driven semiconductor elements, particularly having a device for detecting an abnormality of the voltage-driven semiconductor element A power conversion device of a mechanism and an abnormality detection method thereof. Background technique [0002] Insulated gate bipolar transistors (Insulated Gate Bipolar Transistor: IGBT) are representative of voltage-driven semiconductor devices, and are widely used in power conversion devices. Hereinafter, in this specification, IGBT is used as the language which refers to the voltage-driven type semiconductor element as a whole, and it demonstrates. [0003] As the protection of the power conversion device, a method of detecting an overcurrent generated by a load short circuit of the power...

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Problems solved by technology

[0007]However, in the conventional method, the overcurrent is cut off by the IGBT itself, so when the current cutoff function is lost due to a failure of the IGBT itself, etc. , there is a problem that it cannot be protected

Furthermore, there is also a problem that the IGBT cannot be protected when wrong on / off control of the IGBT is performed due to a malfunction or failure of the gate drive circuit.

[0008] In addition, in a power conversion device composed of a plurality of IGBTs, the failure to cut off the current of one IGBT element causes the overcurrent of other IGBT elements, which may affect the The problem of damage to multiple IGBT elements

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