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Magnetoresistance effect element and method of producing the same

A technology for magnetoresistance effect elements and manufacturing methods, which is applied to the manufacture/processing of electromagnetic devices, manufacture of inductors/transformers/magnets, electrical components, etc., and can solve problems such as deterioration of characteristics and deterioration of reading characteristics of magnetoresistance effect elements , to achieve the effect of suppressing deterioration, stabilizing reading characteristics, and inhibiting oxidation

Inactive Publication Date: 2008-04-02
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] If the second magnetization fixed layer 18c is oxidized, characteristics such as MR (magnetoresistance) ratio of the second magnetization fixed layer 18c deteriorate, so that the read characteristic of the magnetoresistance effect element (read element) deteriorates

Method used

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  • Magnetoresistance effect element and method of producing the same
  • Magnetoresistance effect element and method of producing the same
  • Magnetoresistance effect element and method of producing the same

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Embodiment Construction

[0037] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0038] A method of manufacturing the magnetoresistance effect element of this embodiment will be described below with reference to FIGS. 1A to 1C.

[0039] In FIG. 1A , first, an underlayer 14 is formed on a wafer substrate 12 . Then, an antiferromagnetic layer 16 , a first magnetization fixed layer 18 a , a ruthenium (Ru) layer 18 b , and a second magnetization fixed layer 18 c are sequentially formed on the underlayer 14 . The first magnetization fixed layer 18a, the ruthenium (Ru) layer 18b, and the second magnetization fixed layer 18c are referred to as pinned layers. The first magnetization fixed layer 18a and the second magnetization fixed layer 18c are composed of a ferromagnetic material such as a Co-Fe alloy.

[0040] In FIG. 5B, a metal film 21 such as an aluminum film is formed on the second magnetization fixed layer 18c by ...

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Abstract

The magnetoresistance effect element includes: a magnetization fixing layer; a barrier layer formed on the magnetization fixing layer; and a free layer formed on the barrier layer. The method of producing the magnetoresistance effect element comprises the steps of: forming the magnetization fixing layer on a substrate; forming a metal film as the barrier layer, wherein one part of the metal film on the magnetization fixing layer side is in an amorphous state or a refined crystal state and the other part thereof on the other side is in a crystal state; natural-oxidizing the metal film in an oxidizing atmosphere; forming the free layer on the oxidized metal layer.

Description

technical field [0001] The present invention relates to a magnetoresistance effect element used in a read element and a magnetic memory (MRAM) of a magnetic disk drive device and a method of manufacturing the magnetoresistance effect element. Background technique [0002] Japanese Patent Laid-Open Publication No. 2005-340715 discloses a conventional disk drive device including a magnetoresistance effect element. The disk drive device is shown in FIG. 4 . The TMR element 10B functions as a magnetoresistance effect element. In the TMR element 10B, a barrier layer 8 , an antiferromagnetic layer 5 , a magnetization fixed layer 4 , a tunnel barrier layer (barrier layer) 3 , a magnetization free layer (free layer) 2 , and an overcoat layer 1 are laminated in this order. [0003] The tunnel barrier layer (barrier layer) 3 magnetically insulates the magnetization free layer (free layer) 2 from the magnetization fixed layer 4 , and applies a tunnel current corresponding to the magn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/39H01L43/08
CPCG11C11/16B82Y10/00H01L43/08H01L43/12G01R33/093G11B5/3906H01F10/3272H01F41/307H01F10/3254G11B5/3909B82Y25/00B82Y40/00Y10T428/1107H10N50/10H10N50/01G11B5/39G11B5/127H01L27/10
Inventor 平野浩二小田切充
Owner FUJITSU LTD