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Making method for organic EL part and image display system

A technology of electroluminescent components and manufacturing methods, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, and electric solid-state devices, etc., can solve the problems of large differences in electrical properties of thin-film transistors, increase complexity, increase aperture ratio, and improve The effect of excessive electrical difference

Active Publication Date: 2011-05-18
INNOLUX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above problems, several preferred embodiments of the present invention improve the problem of excessive electrical differences between thin film transistors by adding a protection film.

Method used

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  • Making method for organic EL part and image display system
  • Making method for organic EL part and image display system
  • Making method for organic EL part and image display system

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0022] Figure 2a-2f It is a cross-sectional view illustrating a method for manufacturing an organic electroluminescent element in a preferred embodiment of the present invention.

[0023] Such as Figure 2a As shown, a buffer layer is sequentially formed on a substrate 200 including a first element region (for example, switching thin film transistor (switchingthin film transistor) region I) and a second element region (for example, driving thin film transistor (drivingthin film transistor) region II) 202 , an amorphous silicon layer 204 and a protective film 206 . Wherein, the protection film 206 is formed on the part of the amorphous silicon layer 204 in the second element region II; and the protection film 206 includes a material based on silicon, such as silicon oxide (SiOx), silicon nitride (SiNx), Silicon oxynitride (SiOxNy), or a stacked structure of silicon oxide and silicon nitride.

[0024] Such as Figure 2b As shown, an excimer laser annealing process 208 is pe...

no. 2 Embodiment

[0029] Figure 3a ~ 3f It is a cross-sectional view illustrating a manufacturing method of an organic electroluminescent element in another preferred embodiment of the present invention.

[0030] Such as Figure 3a As shown, a buffer layer 302 and an amorphous silicon layer 304 are sequentially formed on a substrate 300 including a switching thin film transistor region I and a driving thin film transistor region II.

[0031] Such as Figure 3b As shown, the amorphous silicon layer 304 is patterned to form a patterned amorphous silicon layer 304b located in the switching thin film transistor region I and a patterned amorphous silicon layer 304a located in the driving thin film transistor region II.

[0032] Such as Figure 3c As shown, a protective film 306 covering the surface of the patterned amorphous silicon layer 304 a and part of the buffer layer 302 is formed. The protective film 306 includes a silicon-based material, such as silicon oxide (SiOx), silicon nitride (Si...

no. 3 Embodiment

[0037] Figure 4a~4g It is a cross-sectional view illustrating a manufacturing method of an organic electroluminescence device in another preferred embodiment of the present invention.

[0038] Such as Figure 4a As shown, a patterned protection film 402 is formed on a substrate 400 including a switching thin film transistor region I and a driving thin film transistor region II. The above-mentioned patterned protective film is located in the region II of the driving thin film transistor. The material of the patterned protection film 402 includes silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or a stacked structure thereof.

[0039] Such as Figure 4b As shown, a buffer layer 404 is formed on the patterned protection film 402 and the substrate 400 . Next, an amorphous silicon layer 406 is formed on the buffer layer 404, such as Figure 4c shown.

[0040] Such as Figure 4d As shown, an excimer laser annealing process 408 is performed on the am...

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Abstract

The invention relates to a method of manufacturing an organic electrization lighting component. The invention includes the steps of providing a base plate, including a first component area and a second component area; forming an amorphous silicon layer above the base plate; forming a protection film above the partial amorphous silicon layer in the second component area; performing excimer laser annealing process on the amorphous silicon layer, in order to convert the amorphous layer to a polycrystalline silicon layer; removing the protection film; patterning the amorphous silicon layer to form a first patterning polycrystalline silicon layer in the first component area and a second patterning polycrystalline silicon layer in the second component area, wherein, the grain size of the first patterning polycrystalline silicon layer is greater than the second patterning polycrystalline silicon layer, forming the organic electrization lighting component.

Description

technical field [0001] The invention relates to a manufacturing method of an electroluminescent element and an image display system using the electroluminescent element, and in particular to a manufacturing method of a thin film transistor and an image display system using the thin film transistor. Background technique [0002] Generally speaking, thin film transistors mainly include amorphous silicon thin film transistors and polysilicon thin film transistors. The array substrate of an existing electroluminescent device display (electroluminescent device display) can be divided into a light-emitting area and a circuit area, and the manufacturing method of the array substrate mainly includes: forming a thin film transistor (thin film transistor; TFT), forming a pixel electrode, and forming Organic Light Emitting Diodes. Wherein, the manufacturing process of the thin film transistor generally includes the following steps: forming a buffer layer, a polysilicon layer, a gate i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L27/32G09F9/00
Inventor 詹川逸刘俊彦曾章和
Owner INNOLUX CORP
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