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Mask applied for continuous side direction long crystal technique and laser crystalization method

A continuity and mask technology, applied in laser welding equipment, electrical components, circuits, etc., can solve problems such as holes

Active Publication Date: 2010-08-25
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the overlapping crystallization region 63 is prone to produce holes after being repeatedly irradiated by the laser 200

Method used

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  • Mask applied for continuous side direction long crystal technique and laser crystalization method
  • Mask applied for continuous side direction long crystal technique and laser crystalization method
  • Mask applied for continuous side direction long crystal technique and laser crystalization method

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Embodiment Construction

[0039] The invention provides a mask applied to continuous lateral crystal growth technology and a laser crystallization method using the mask.

[0040] As shown in the preferred embodiment of FIG. 2 , the mask 900 of the present invention includes a main light transmission unit 100 and a secondary light transmission unit 300 . The main light transmission unit 100 has a main symmetrical light transmission area 130 relative to the symmetry axis 110 . The auxiliary light transmission unit 300 is located on both sides of the main light transmission unit 100 along the axis of symmetry 110 . The auxiliary light-transmitting unit 300 has a light-shielding pattern 700 , and the light-shielding pattern 700 has a plurality of auxiliary light-transmitting regions 730 symmetrically distributed with respect to the axis of symmetry 110 . In this preferred embodiment, the auxiliary light transmission unit 300 further includes a first auxiliary light transmission unit 330 and a second auxil...

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Abstract

The invention provides a mask applied to a continuous side-direction crystallization technique and a laser crystallization method adopting the mask. The mask comprises a main ray transmitting unit and an assistant ray transmitting unit. The main ray transmitting unit corresponding to a symmetrical axis is provided with a main symmetrical ray transmitting zone. The assistant ray transmitting unit is arranged at the two sides of the main ray transmitting unit along the symmetrical axis. The assistant ray transmitting unit is provided with light-shield patterns which are internally provided witha plurality of assistant ray transmitting zones which are symmetrically arranged against the symmetrical axis. The laser crystallization method includes the supply of a basic board provided with a non-silicon layer, the supply of the mask, the adoption of laser to melt the non-silicon layer through the mask so as to generate a first crystallization zone on the base board, the moving of the mask to lead a first assistant ray transmitting unit of the assistant ray transmitting unit to move to correspond to the second assistant crystallization unit of the first crystallization zone and the application of laser to melt the non-silicon layer through the mask to generate a second crystallization zone on the basic board.

Description

technical field [0001] The present invention relates to a mask and a laser crystallization method; specifically, the present invention relates to a mask and a laser crystallization method applied to continuous lateral crystal growth technology. Background technique [0002] Liquid Crystal Displays (LCDs) are widely used in various electronic products such as computers, televisions, and mobile phones. The liquid crystal display is driven by an integrated circuit. Therefore, the operating speed of the transistors of the integrated circuit becomes one of the important factors affecting the performance of the liquid crystal display. [0003] Compared with the charge carriers in amorphous silicon, the mobility of charge carriers in polysilicon is higher. Therefore, polysilicon thin film transistors are widely used in integrated circuits of liquid crystal displays. To increase the mobility of charge carriers in polysilicon, the crystal grain size can be increased, or the number ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/268H01L21/336B23K26/06B23K26/066
Inventor 孙铭伟
Owner AU OPTRONICS CORP