Method for measuring loading effect and percentage of coverage for thin membrane stairway
A measurement method and coverage technology, applied in semiconductor/solid-state device testing/measurement, gaseous chemical plating, metal material coating process, etc., can solve the problems of slow speed, increased production cost, long sample analysis cycle, etc. The effect of reducing manufacturing cost and improving production efficiency
Inactive Publication Date: 2010-08-11
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, these methods are destructive, requiring the wafer to be sliced, and then using scanning electron microscopy to measure the thickness of the film, and the speed is very slow, and the sample analysis cycle is long, which increases the production cost
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0036] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0037] In the following description, specific details are set forth in order to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific implementation disclosed below.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a measurement method of the step coverage ratio and loading effect of a thin film. The method comprises the following steps: a semiconductor substrate is provided; a testing zone is formed on the surface of the substrate; a dielectric thin film is deposited on the surface of the testing zone; the thickness of the thin film is measured through using an optical characteristic dimension measurement method; the step coverage ratio and the loading effect of the thin film are calculated through using the thickness. The method of the invention can measure the step coverage ratio and the loading effect of the thin film dielectric layer without damaging the wafer.
Description
Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for measuring the step coverage and loading effect of a dielectric layer. Background technique [0002] With the progress of the semiconductor industry, the density of semiconductor devices continues to increase, circuit functions are becoming more and more complex, and the number and types of dielectric films in semiconductor devices have increased significantly. The quality of the dielectric film, such as thickness uniformity and step coverage, has gradually become the key to affecting device performance. Among the many dielectric film deposition technologies, chemical vapor deposition (CVD) technology is widely used. Most of the dielectric films are deposited by the CVD process. The CVD process involves mixing chemical substances containing atoms or molecules required by the dielectric film in a reaction chamber and reacting in a gaseous state...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/04H01L21/66
Inventor 何有丰朴松源白杰
Owner SEMICON MFG INT (SHANGHAI) CORP