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Semiconductor device capacitor fabrication method

A semiconductor and capacitor technology, applied in the field of semiconductor device capacitor preparation, can solve the problems of limiting capacitor capacity, unable to use oxide capacitors and PIP capacitors synchronously, etc.

Inactive Publication Date: 2008-07-02
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] Moreover, although PIP can be used to form capacitors, oxide capacitors and PIP capacitors cannot be used simultaneously
Therefore, the capacity of the capacitor is significantly limited

Method used

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  • Semiconductor device capacitor fabrication method
  • Semiconductor device capacitor fabrication method
  • Semiconductor device capacitor fabrication method

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0024] According to embodiments, active region 201 and first gate 203 may be formed on and / or over a P-well type semiconductor substrate having devices separated from each other by an STI layer. A silicon nitride (SiN) layer 205 may then be deposited on and / or over portions of the first gate 203 over which a capacitor may be formed. Second gate 207 may then be formed on and / or over silicon nitride layer 205 .

[0025] A first insulating layer 209 may then be deposited over the semiconductor substrate, and subsequently planarized by a CMP process. Second insulating layer 211 may then be subsequently deposited on and / or over first insulating layer 209 . The second insulating layer 211 may then be planarized through a CMP process. Accordingly, the first insulating layer 209 and the second insulating layer 211 are sequentially formed.

[0026] In order to selectively remove a portion of the photoresist (PR) deposited entirely on and / or over the second insulating layer 211, a ph...

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Abstract

A semiconductor device capacitor manufacturing method capable of realizing the synchronous use of oxide capacitors and polysilicon-insulator-polysilicon (PIP) capacitors of semiconductor devices, depending on the use or non-use of metal line terminals. The semiconductor device capacitor manufacturing method may include: forming an active region and a first gate on a semiconductor substrate, depositing a silicon nitride layer on which a capacitor will be formed on a part of the first gate, and forming a silicon nitride layer on the silicon nitride A second gate is formed over the layer, a first insulating layer and a second insulating layer are successively formed over the resulting structure, and line terminals for the transistor and the capacitor are formed extending through the first insulating layer and the second insulating layer.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2006-0135904 filed on December 28, 2006, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to a kind of semiconductor device capacitance preparation method, relate to a kind of semiconductor device capacitance preparation method that can realize the synchronous use of the oxide capacitance of semiconductor device and polysilicon-insulator-polysilicon (PIP) capacitance, depend on using or not using metal line terminals. Background technique [0003] Aspects of semiconductor technology have focused on providing methods for fabricating capacitors for semiconductor devices, particularly those that can be classified into metal-insulator-metal (MIM) capacitors or polysilicon-insulator-polysilicon (PIP) capacitors. Unlike metal oxide silicon (MOS) capacitors or junction capacitors, MIM capacitors and PIP capacitors are bias independent and t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8234H01L27/04
CPCH01L27/0629H01L28/40H01L29/94H10B99/00H10B12/00
Inventor 安正豪
Owner DONGBU HITEK CO LTD