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Method for producing high purity ultra-fine silicon dioxide

A technology of ultra-fine silicon dioxide and production method, applied in the direction of silicon dioxide, silicon oxide, etc., can solve the problems of high production cost, complex process, incomplete separation, etc., and achieve regular morphology, uniform distribution, and fine product particle size. Effect

Inactive Publication Date: 2010-11-03
山东华昊硅业科技有限公司
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

At present, the preparation of high-purity silica is divided into two categories: natural method and synthetic method, both of which have the problem of incomplete separation and the inability to effectively improve the purity of silica, and some processes are too complicated and the production cost is high

Method used

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  • Method for producing high purity ultra-fine silicon dioxide
  • Method for producing high purity ultra-fine silicon dioxide

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Embodiment Construction

[0011] Accompanying drawing is a kind of specific embodiment of the present invention. This embodiment includes the following features:

[0012] 1. Purification of compressed air:

[0013] 1 Purification of compressed air: the air is compressed by a compressor at a pressure of 0.6-1.2 MPa, separated from oil and water, precision filtered, freeze-dried (dew point reaches -40 degrees Celsius), and high-precision filtered to form a high-purity compressed gas. Guaranteed to contain no impurities.

[0014] Second, the production process:

[0015] 1. The four processes of beneficiation-coarse crushing-cleaning-drying are realized through raw material procurement. It is guaranteed that the raw material is silicon dioxide powder with a crystalline purity of 99.90%-99.99%.

[0016] 2. Jet milling First, the inner wall of the milling chamber and the inner wall of the pipeline of the jet mill are coated with special wear-resistant materials that do not contain any metal impurities, a...

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Abstract

The invention discloses a producing method, in particular to a method for producing high-purity ultrafine silicon dioxide. The method for producing the high-purity ultrafine silicon dioxide is specially characterized in that processed high-pressure gas arrives at a nozzle of a jet mill through a stainless steel pipe; after the high-pressure gas is processed by the nozzle of the jet mill, supersonic high-speed gas is formed; at the same time, the gas volume ejected by the jet mill expands instantaneously to drive raw materials entering from a feed inlet to move with a high speed and collide toeach other to achieve the goal of crashing. The invention has the advantages of that, 1 purifying technology that purifying solution is formulated and discharged without pollution; 2 no dust is discharged during the crashing process; 3 no impurity enters during the crashing process; 4 the product is gathered by adopting full-auto vacuum package; and 5 the product has fine granularity, even distribution and regular feature.

Description

(1) Technical field [0001] The invention relates to a production method, in particular to a production method of high-purity ultrafine silicon dioxide. (2) Background technology [0002] High-purity silica is an indispensable material for the production of high-tech fields such as semiconductor materials, integrated circuits, optical fibers, and glass fibers. It has stable and unique physical and chemical properties. At present, the preparation of high-purity silica is divided into two categories: natural method and synthetic method, both of which have the problem of incomplete separation and the inability to effectively improve the purity of silica, and some processes are too complicated and the production cost is high. (3) Contents of the invention [0003] In order to make up for the deficiencies of the prior art, the present invention provides a production method of high-purity ultrafine silicon dioxide with simple process and thorough separation. [0004] The present...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/12
Inventor 李钦稿赵丕善邱向明
Owner 山东华昊硅业科技有限公司