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Chemical mechanical grinding fluid and chemical mechanical planarization method

A technology of chemical machinery and grinding slurry, which is applied in the direction of chemical instruments and methods, and other chemical processes, can solve unspoken problems such as chemical mechanical grinding, achieve the best production efficiency and commercial profit, improve grinding efficiency, and simple configuration.

Inactive Publication Date: 2010-06-30
EPOCH MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The polishing composition is suitable for performing chemical mechanical polishing on a polymer-based insulating material layer with a low dielectric constant; Possibility of chemical-mechanical polishing of layers (e.g. metallic copper)

Method used

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  • Chemical mechanical grinding fluid and chemical mechanical planarization method
  • Chemical mechanical grinding fluid and chemical mechanical planarization method
  • Chemical mechanical grinding fluid and chemical mechanical planarization method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-4

[0065] [Example 1-4] Preparation of Chemical Mechanical Polishing Slurry

[0066] Mix 300ml of sodium water glass with 2700ml of deionized water to form an aqueous solution of sodium silicate, pass it through a cation exchange resin column, and gradually A KOH aqueous solution with a concentration of 5wt% was added until the pH value of the sodium silicate aqueous solution was greater than 10, so as to carry out the polycondensation reaction of silicic acid. Then cool to 40° C., add 300 ml of a 10 wt % sodium aluminate aqueous solution, let it stand for 40 minutes to react, and then pass through the cation exchange resin column again to obtain a silica sol A with a clear appearance.

[0067] This silica sol A comprises several silicon dioxide grinding particles and aqueous medium which are modified by sodium aluminate and includes potassium, and the grinding particles are passed through a nanometer particle size analyzer (by De Rui Ke (TREKINTAL) Manufactured by the company, ...

Embodiment 2 and comparative example 2

[0117] After polishing the surface of the patterned wafer with the polishing slurry of Example 2, the contours of the components everywhere are slightly black, so the barrier layer (TaN) of the polished patterned wafer has been slightly eroded, avoiding some TaN barrier layer damage occurs.

[0118] Looking at the surface of the patterned wafer polished with the polishing slurry of Comparative Example 2, it is found that the contours of the components everywhere have turned black, which shows that the polishing slurry of Comparative Example 2 cannot prevent the patterned wafer from forming a tantalum nitride barrier layer at all. damage; therefore, compared with Comparative Example 2, the polishing slurry in Example 2 can prevent the barrier layer of the patterned wafer from being over-polished.

[0119] See also the efficacy data of each of the polishing slurries of Example 2 and Comparative Example 2 shown in Table 1. It is obvious that the polishing rate of copper (Example ...

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Abstract

The invention relates to a chemical and mechanical lapping slurry, in particular to a chemical and mechanical lapping slurry which is capable of removing copper on a piece of design wafer, including an acid, a surfactant, a water-based medium, and a plurality of silicon dioxide lapping particles containing potassium, wherein the surfaces of the particles are modified by a surface electrical property modifier; by means of the structure of the lapped particles, compared with lapping slurry adopted by general industry, the lapping slurry has the advantages that damages of a tantalum nitride barrier to the lapped design wafer can be further avoided; copper covered on the barrier can be stripped more thoroughly; sunken degree formed on the lapped surface of the wafer is less; the whole efficacy is excellent and in accordance with requirements of the industry; besides, a chemical and mechanical flattening method is provided, namely, leading a piece of wafer to be contacted with a polishing pad, conveying the chemical and mechanical lapping slurry containing a plurality of the silicon dioxide lapping particles to the wafer and the polishing pad, and flattening at least partial surface ofthe wafer.

Description

technical field [0001] The invention relates to a polishing slurry, in particular to a chemical mechanical polishing slurry containing several silicon dioxide abrasive particles which are surface-modified by a surface electrical property modifier and contain potassium. Background technique [0002] Chemical mechanical planarization technology has become an indispensable part of the semiconductor manufacturing process. Its process capability not only has a direct impact on the quality of the back-end lithography process, but also increases with the increase of the wafer diameter and the reduction of the process line width. As well as the changing trend of semiconductor process parameters such as the improvement of component integration, compared with the past, the industry has stricter requirements for the flatness of the wafer surface. The chemical mechanical polishing (CMP) process can make the surface of the wafer fully planarized, and the advantage of CMP is that it can b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14
Inventor 侯惠芳刘文政陈彦良陈瑞清
Owner EPOCH MATERIAL CO LTD