Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal conducting wire repairing method and repairing apparatus

A metal wire and metal thin film technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem that the microscopic metal wire cannot be directly repaired, and achieve the effect of improving process efficiency

Inactive Publication Date: 2008-07-23
INNOCOM TECH SHENZHEN +1
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the microscopic metal wires cannot be directly repaired in the prior art, it is necessary to provide a repair method that can directly repair the microscopic metal wires
[0007] In order to solve the problem that the microscopic metal wire cannot be directly repaired in the prior art, it is necessary to provide a microscopic metal wire repair device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal conducting wire repairing method and repairing apparatus
  • Metal conducting wire repairing method and repairing apparatus
  • Metal conducting wire repairing method and repairing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] see figure 1 , is a three-dimensional schematic view of the metal wire repairing device of the present invention. The repair device 10 includes a cavity 100 , a vacuum mercury 110 and a main body 120 . The cavity 100 is a rectangular parallelepiped structure consisting of a box body 101 and a cover body 102 . The main body 120 is located in the receiving space formed by the box body 101 and the cover body 102 of the cavity body 100 . The cover 102 includes a first air guiding hole 1021 and a second air guiding hole 1022 .

[0016] see figure 2 , is a three-dimensional schematic diagram of the box body 101 . The box body 101 includes a first side wall 1011 , a second side wall 1012 , a third side wall 1013 , a fourth side wall 1014 and a bottom plate 1015 . The first sidewall 1011 is provided with a suction hole 1016 . The inner surface of the first side wall 1011 is provided with two support structures 1017 , and the inner surface of the third side wall 1013 is co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a metal conducting wire mending method, comprising a base plate, determining a broken-circuit part of a metal conducting wire and forming a metal film at the broken-circuit part of the metal conducting wire by chemical vapor deposition method.

Description

technical field [0001] The invention relates to a metal wire repairing method and a repairing device. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, more and more attention has been paid to the back-end metallization process, the components are getting smaller and smaller, the line width of metal wires is correspondingly reduced, and the integration degree is correspondingly increased. [0003] In the process of traditional integrated circuits, aluminum alloy is the main material of metal wires. In order to improve the resistance / capacitance time delay caused by the reduction of the metal wire width, copper gradually replaces aluminum due to its low resistivity, high melting point, good thermal conductivity, and chemical vapor deposition. The main material of the metal wire in the circuit. [0004] Usually, in the traditional integrated circuit manufacturing process, such as the wiring of metal wires on a printed ci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/06C23C16/52
Inventor 颜硕廷
Owner INNOCOM TECH SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com