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Intracavity frequency doubling micro-chip laser device

A microchip laser and intracavity frequency doubling technology, which is applied in the field of lasers, can solve the problems of extinction ratio changes, high processing precision, and difficult processing and assembly, and achieve the effect of low series and high extinction ratio

Active Publication Date: 2011-03-30
CASIX
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can improve the extinction ratio, it is not easy to process and assemble due to the special angle between the wave plate and the laser crystal.
Another method is to directly process the laser crystal into a full-wave plate or half-wave plate of frequency-doubled light, but this method requires high processing accuracy, which is difficult to achieve in terms of technology, and its phase delay varies with temperature. changes, causing the extinction ratio to change with temperature

Method used

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  • Intracavity frequency doubling micro-chip laser device
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  • Intracavity frequency doubling micro-chip laser device

Examples

Experimental program
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specific Embodiment 2

[0019] Specific implementation example 2, except that the phase compensation sheet 6 is replaced by Nd:YVO 4 Except for the crystal, all other parts and structures are the same as in specific implementation 1, and Nd:YVO 4 Crystal 4 and Nd:YVO 4 The optical axes of crystal 6 are perpendicular to each other, Nd:YVO 4 Crystal 4 pairs of frequency doubled light phase delay angle θ 1 With Nd:YVO as a phase compensation film 4 The phase delay angle θ2 of crystal 6 to the frequency-doubled light has the following relationship: θ 1 +θ 2 =Kπ, K is an integer.

specific Embodiment 3

[0020] Specific implementation example 3, except that the phase compensation sheet 6 is replaced by GdVO 4 Except for the crystal, all other parts and structures are the same as in specific implementation 1, and Nd:YVO 4 Crystal 4 and GdVO 4 The 6 optical axes of the crystal are perpendicular to each other, Nd:YVO 4 Crystal 4 pairs of frequency doubled light phase delay angle θ 1 With GdVO as a phase compensation film 4 Phase delay angle θ of crystal 6 to frequency doubled light 2 It has the following relationship: θ 1 +θ 2 =Kπ, K is an integer. Specific implementation example 4, except that the phase compensation sheet 6 is replaced by Nd:GdVO 4 Except for the crystal, all other parts and structures are the same as in the first embodiment. And Nd:YVO 4 Crystal 4 and Nd:GdVO 4 The 6 optical axes of the crystal are perpendicular to each other, Nd:YVO 4 Crystal 4 pairs of frequency doubled light phase delay angle θ 1 With Nd:GdVO as a phase compensation film 4 Phase delay angle θ o...

specific Embodiment 6

[0022] Specific implementation example 6, replace the phase compensation sheet 6 with Nd:YVO 4 Crystal and Nd:YVO 4 The front face of crystal 6 is used as the coating surface S 1 , All other components and structures are the same as those in specific implementation 5. And, Nd:YVO 4 Crystal 4 and Nd:YVO 4 The 6 optical axes of the crystal are perpendicular to each other, Nd:YVO 4 Crystal 4 pairs of frequency doubled light phase delay angle θ 1 With Nd:YVO as a phase compensation film 4 Phase delay angle θ of crystal 6 to frequency doubled light 2 Have the following relationship θ 1 +θ 2 =Kπ, K is an integer.

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Abstract

The present invention provides an intracavity-doubled microchip laser, which comprises of pumping source, collimating lens, focus lens, laser crystal and frequency doubling crystal arranged in directions in turn. The laser crystal is adhered with a phase compensation plate to form a compound laser crystal whose phase delay is equal to a half-wave plate or a full-wave plate of frequency doubling wavelength, the front and back end plating of compound laser crystal and frequency doubling crystal, optical axis of laser crystal and phase compensation plate are parallel or upright, and the phase delay angle of laser crystal to frequency doubling light Theta1 and phase delay angle of phase compensation plate to frequency doubling light Theta2 meet the formula of: Theta1+Theta2=KPi, K is integer.The frequency doubling light of present invention trips in compound crystal in cavity without phenomenon of depolarization, so the higher extinction ratio of polarization frequency light output is obtained. When the series of wave plate is low, the polarization extinction is not sensitive to temperature.

Description

【Technical Field】 [0001] The invention relates to a laser, in particular to an intracavity frequency doubled microchip laser with high extinction ratio polarization output frequency doubled light. 【Background technique】 [0002] Among the semiconductor pump lasers, the microchip structure intracavity frequency doubled laser has the advantages of high efficiency and compact structure. An existing typical microchip laser structure is shown in Figure 1: including semiconductor pump source 1 (LD), collimator lens 2, focusing lens 3, birefringent laser crystal 4 and type II phase matching frequency doubling crystal 5. S 1 And S 2 The two coating surfaces of the microchip laser. Usually S 1 The surface plating is anti-reflection to the pump light and to the fundamental frequency light λ ω And frequency doubled light λ 2ω High reflective film, S 2 Fundamental frequency light λ ω High reflection and pair frequency doubled light λ 2ω The high-transmittance film forms a laser resonan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/05H01S3/08H01S3/109
Inventor 陈建林
Owner CASIX