Method for making ultra-high power intelligent device using exposal field split joint technology
A technology for ultra-high-power, high-power devices, which is applied in the field of ultra-high-power smart devices using exposure field splicing technology, and can solve problems such as inability to manufacture
Inactive Publication Date: 2008-08-27
中国电子信息产业集团有限公司 +1
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Problems solved by technology
[0005] When the size of the power device unit is larger than the exposure field, it cannot be fabricated
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[0015] The invention provides a method for manufacturing ultra-high-power intelligent devices using exposure field splicing technology to realize the production of large-area, ultra-high-power devices through reasonable layout design and exposure field splicing technology under the condition of stepping photolithography technology. The specific implementation process is illustrated as follows:
[0016] 1) Layout design and plate making for the power device unit
[0017] A plurality of ultra-high-power smart devices 2 are arranged on the substrate silicon wafer 1 (as shown in FIG. 2 ). An ultra-high-power smart device 2 is composed of N identical power device units 3 connected in parallel, and can integrate a control circuit. In order to realize the intelligence of ultra-high power devices. During the manufacturing process, the graphic structure of the power device unit 3 is reasonably designed to form a good transition to other units, and N identical power device units 3 and ...
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The invention belongs to the integrated circuit device manufacturing technical field, in particular relating to a method for adopting the splicing technology of exposure fields to manufacture a superpower intelligent device, wherein, during the technological manufacturing process of the superpower intelligent device which is formed by parallel connection of N identical power device units and comprises control circuits, no scribing groove is arranged between the N identical power device units or the control circuits; exposure is performed by adoption of step-by-step exposure means, and the exposure fields are mutually spliced. A plurality of superpower intelligent devices are simultaneously manufactured on an extensive substrate silicon wafer; scribing grooves are arranged between adjacent superpower intelligent devices, thereby being favorable for further scribing package. The method fully utilizes the step-by-step splicing technology of the exposure fields to realize splicing integration of various different circuit modules on the extensive substrate silicon wafer and is a technical method which is extremely suitable for manufacturing the superpower intelligent power electronic device.
Description
technical field [0001] The invention belongs to the technical scope of integrated circuit device manufacturing, and in particular relates to a method for manufacturing ultra-high-power intelligent devices by using exposure field splicing technology. Background technique [0002] The current development direction of power electronic devices includes higher power devices, intelligent ultra-high power devices, and the use of modular technology to manufacture ultra-large-capacity power modules. [0003] Increasing the output power of devices is always an important target option for power devices, and increasing power usually means that the area size of a single device will continue to increase. On the other hand, due to the continuous higher requirements for the performance indicators of power devices, the process technology for processing and manufacturing power devices is also constantly upgrading. Currently, better exposure quality can be obtained and the device quality can b...
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IPC IPC(8): H01L21/82G03F7/20
Inventor 严利人刘志弘周卫徐阳
Owner 中国电子信息产业集团有限公司