Nitride semiconductor light-emitting device and manufacture method thereof
A technology for nitride semiconductors and light-emitting devices, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as the reduction of luminous efficiency of light-emitting devices.
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no. 1 approach
[0032] Figure 3A-3F is a sectional view illustrating a method of manufacturing the nitride semiconductor according to the first embodiment of the present invention.
[0033] first, Figure 3A is a cross-sectional view of the substrate. Substrate 21 may be, for example, one of a Si substrate, a sapphire substrate, and a SiC substrate. A predetermined pattern 21-1 is formed in the substrate along the X-axis direction. Although the surface unevenness pattern having a stripe-like pattern constituting the surface unevenness will be described below, the surface unevenness pattern is not limited thereto. For example, a surface unevenness pattern having a lenticular shape can be used. The surface uneven pattern 21-1 having a stripe shape can be formed using photolithography and etching. Here, the surface unevenness of the surface unevenness pattern 21-1 may have a width of about 5 μm and a height and depth of about 1˜2 μm.
[0034] Next, refer to Figure 3B , forming a buffer l...
no. 2 approach
[0057] Figure 7 is a plan view of an LED chip according to a second embodiment of the present invention.
[0058] refer to Figure 7 , the LED chip strip 30 is as Figure 4 The LED chip unit is divided into a plurality of LED chips 31 . Each LED chip 31 includes a p-type electrode 32 , an n-type electrode 33 and first reflective layers 34 and 35 .
[0059] The second reflective layers 36 and 37 may be formed on the other side of the LED chip 31 on which the first reflective layers 34 and 35 are not formed. Therefore, the first reflective layers 34 and 35 are formed on both sides of the LED chip 31 along the X-axis direction, and the second reflective layers 36 and 37 are formed on both sides of the LED chip 31 along the Y-axis direction, so that the light transmitted to the LED chip 31 Part of the light generated by the side active layer 24 is more effectively reflected. Therefore, light loss at the side of the LED is minimized and light emission efficiency can be maximi...
no. 3 approach
[0064] Figure 8 is a sectional view of a nitride semiconductor light emitting device according to a third embodiment of the present invention.
[0065] refer to Figure 8 , the nitride semiconductor light emitting device according to the third embodiment of the present invention includes a substrate 41 having a stripe-shaped surface unevenness pattern, a buffer layer 42, a first conduction type semiconductor layer 43, an active layer 44, a second conduction type semiconductor layer 45 and the third conductive semiconductor thin layer 46. Can use reference Figure 3A-3F The method for manufacturing a nitride semiconductor light emitting device is implemented to implement the above method for manufacturing a nitride semiconductor light emitting device.
[0066] Also, the nitride semiconductor light emitting device may have a structure in which a side is etched at a predetermined angle, which is vertically facing the direction of the surface unevenness pattern of the substrate...
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