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Method for preparing tantalum doping tin oxide thin film carrier material for gene chip

A gene chip and carrier material technology, which is applied in the field of preparation of tantalum-doped tin oxide thin film carrier materials for gene chips, can solve the problem of poor stability of the biosignal detection sensitivity chip, expensive biosignal detection equipment, difficulty in portability and Miniaturization and other issues to achieve high-sensitivity label-free electrical detection, strong specificity label-free electrical detection, and easy industrial production

Inactive Publication Date: 2011-08-24
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, despite the rapid development of gene chip technology for more than ten years, it still cannot become a commonly used technology in clinical medicine and experimental research, and it faces many key problems that need to be solved urgently
[0003] At present, the most mature and widely used detection technology in gene chips is the fluorescent labeling method. The disadvantages of this method are: the target samples to be detected need to be labeled with fluorescein, the process is complicated and the technical cost is high; the detection equipment of biological signals (Gene chip scanner) is expensive and relatively large in size, making it difficult to achieve portability and miniaturization; biological signal detection sensitivity and chip stability are poor, etc.
Through the search of prior art literature, no relevant reports have been found about the use of tantalum-doped tin oxide thin films as gene chip carrier materials and their preparation methods

Method used

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  • Method for preparing tantalum doping tin oxide thin film carrier material for gene chip
  • Method for preparing tantalum doping tin oxide thin film carrier material for gene chip
  • Method for preparing tantalum doping tin oxide thin film carrier material for gene chip

Examples

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Effect test

Embodiment 1

[0029] (1) Ta with a purity of 99.99% 2 o 5 and SnO 2 The powder is fully mixed, pressed into a billet under a pressure of 80Mpa, put into a high-temperature sintering furnace and sintered at 1650°C for 3 hours to obtain a tantalum-doped tin oxide sputtering target, in which Ta 2 o 5 The mass percentage (wt.%) is 1%, SnO 2 The mass percentage (wt.%) of the target is 99%, and the size of the target is 60mm in diameter and 6mm in thickness;

[0030] (2) The prepared tantalum-doped tin oxide sputtering target is fully cleaned with analytical pure acetone and deionized water, then placed in an oven, and kept at 120°C for 3 hours to remove surface oil and other impurities;

[0031] (3) Use ordinary slide glass as the film substrate material, fully wash it with analytical pure acetone and deionized water before sputtering, then put it in an oven, and keep it warm at 80°C for 2 hours;

[0032] (4) Install and put the target material and glass slide pretreated in (2) and (3) into...

Embodiment 2

[0038] Except that the composition and preparation parameters of the sputtering target are different from those in Example 1: the Ta with a purity of 99.99% 2 o 5 and SnO 2 The powder is fully mixed, pressed into a billet under a pressure of 80Mpa, put into a high-temperature sintering furnace and sintered at 1600°C for 4 hours to obtain a tantalum-doped tin oxide sputtering target, in which Ta 2 o 5 The mass percentage (wt.%) is 5%, SnO 2 The mass percentage (wt.%) of the target is 95%, and the size of the target is 60mm in diameter and 6mm in thickness;

[0039] All the other processing steps are identical with embodiment 1.

Embodiment 3

[0041] (1) Ta with a purity of 99.99% 2 o 5 and SnO 2 The powder is fully mixed, pressed into a billet under a pressure of 80Mpa, put into a high-temperature sintering furnace and sintered at 1600°C for 4 hours to obtain a tantalum-doped tin oxide sputtering target, in which Ta 2 o 5 The mass percentage (wt.%) is 5%, SnO 2 The mass percentage (wt.%) of the target is 95%, and the size of the target is 60mm in diameter and 6mm in thickness;

[0042] (2) The prepared tantalum-doped tin oxide sputtering target is fully cleaned with analytical pure acetone and deionized water, then placed in an oven, and kept at 140°C for 2 hours to remove surface oil and other impurities;

[0043] (3) Use ordinary glass slides as the film substrate material, fully wash them with analytical pure acetone and deionized water before sputtering, then put them in an oven, and keep them warm at 90°C for 1 hour;

[0044] (4) Install and put the pretreated target material and single crystal silicon (1...

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Abstract

The invention relates to a method of preparing thin-film carrier material of tantalum-doped jewellers putty. By using sputtering target material of tantalum-doped jewellers putty, thin films of tantalum-doped jewellers putty are prepared on a monocrystalline silicon chip or simple glass slide by a magnetron sputtering method; and then the thin films are processed through hydroxylation, amino silanization and aldehyde group modification; the thin-film carrier material of tantalum-doped jewellers putty which is used in a gene chip and is modified by the aldehyde group is prepared. The carrier material prepared by the method has the characteristics that the surface is flat and compact; the thickness is symmetrical; the active group has high density; the hydrophilicity is good; the chemical durability is high; the specific resistance is low and the organism compatibility is good, etc. The no marks electrics detecting, discrimination and analysis with high-sensitivity, high reliability andstrong specificity can be realized on a biological signal. The carrier material adapts to a gene chip adopting the no marks electrics detecting technology. The thin-film carrier material of tantalum-doped jewellers putty also has the advantages that the preparation technology is simple and easy, the cost is low, and the industrialization production is easy to be realized.

Description

technical field [0001] The invention relates to a method for preparing a tantalum-doped tin oxide thin film carrier material, in particular to a method for preparing a tantalum-doped tin oxide thin film carrier material for a gene chip suitable for a label-free electrical detection technology. Background technique [0002] Biochip technology represented by gene chips, because it can detect cells, proteins, nucleic acids, and other biomolecules accurately, quickly, and with high throughput, is widely used in the rapid diagnosis and treatment of diseases, the screening of new drugs, and pharmacogenomics. , gene mutation detection, optimal breeding of crops, judicial identification, environmental testing and national defense and many other fields have been widely used. However, despite the rapid development of gene chip technology for more than ten years, it still cannot become a commonly used technology in clinical medicine and experimental research, and it faces many key prob...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/23C12Q1/68G01N27/00C23C14/34
Inventor 张玉勤蒋业华周荣
Owner KUNMING UNIV OF SCI & TECH