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Method of manufacturing semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as unsatisfactory leakage current characteristics

Inactive Publication Date: 2008-09-24
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the high dielectric material does not satisfy leakage current characteristics in high electric field

Method used

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  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device

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Embodiment Construction

[0017] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and it may be embodied in various forms.

[0018] Figures 1A to 1C is a cross-sectional view of a flash memory device, used to illustrate a method for manufacturing a flash memory device according to an embodiment of the present invention.

[0019] refer to Figure 1A , providing a semiconductor substrate 100 on which a lower layer including a first insulating layer 110 , a first conductive layer 120 and a second insulating layer 130 is formed. Here, in order to use the first insulating layer as a tunnel insulating layer in a NAND flash memory device and as an underlying interlayer insulating layer in a process of manufacturing a capacitor, the first insulating layer 110 may be made of silicon oxide (SiO 2 ) layer formation. In this case, the first insulat...

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Abstract

A method of manufacturing a semiconductor device includes forming a high dielectric insulating layer. An amorphous high dielectric insulating layer having a high density is formed by using a precursor which can be deposited through the atomic layer deposition method at a temperature above 400 DEG C. A resulting insulating exhibits a reduced crystallization during a subsequent annealing process. The capacitance equivalent thickness (CET) characteristic and the leakage current characteristic are improved.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2007-28574 filed on Mar. 23, 2007, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to a method of manufacturing a semiconductor device capable of improving capacitance equivalent thickness (CET) characteristics and leakage current characteristics. Background technique [0004] Generally, a non-volatile memory device retains its stored data even after the power is turned off. In a nonvolatile flash memory device, a unit cell of the flash memory device is formed by sequentially stacking a tunnel insulating layer, a floating gate, a dielectric layer, and a control gate on an active region of a semiconductor substrate. A voltage applied to the gate electrode is coupled to the float...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285H01L21/316H10B69/00
CPCH01L21/31645C23C16/405C23C16/45531C23C16/45553H01L21/02178H01L21/02181H01L21/02189H01L21/02194H01L21/022H01L21/0228H01L21/3141H01L21/3142H01L21/3162H01L21/31641H01L28/40H01L21/02107
Inventor 洪权
Owner SK HYNIX INC