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LED and manufacturing method thereof

A technology of light-emitting diodes and electrodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of complicated manufacturing process and poor yield rate of the manufacturing process, and achieve the effect of improving the light extraction rate and increasing the luminous efficiency

Active Publication Date: 2011-02-09
EPISTAR CORP
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Problems solved by technology

However, the process of the second method is more complicated, so the process yield is not good

Method used

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  • LED and manufacturing method thereof
  • LED and manufacturing method thereof
  • LED and manufacturing method thereof

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Embodiment Construction

[0015] In order to make the above and other purposes, features, and advantages of the present invention more comprehensible, this specification specifically cites preferred embodiments, together with the accompanying drawings, and describes them in detail as follows:

[0016] Please refer to Figure 1A to Figure 1F , which shows a cross-sectional view of the manufacturing process of the light emitting diode according to the first embodiment of the present invention. The light emitting diode 100 of this embodiment at least includes an epitaxial structure layer 120 , a geometric pattern layer 130 , a metal reflective layer 140 , a bonding layer 150 , a permanent substrate 160 , a first electrode 170 and a second electrode 180 . The bonding layer 150 , the metal reflective layer 140 , the geometric pattern layer 130 and the epitaxial structure layer 120 are sequentially stacked on the permanent substrate 160 . The first electrode 170 and the second electrode 180 are respectively ...

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Abstract

A LED and a manufacturing method thereof, the manufacturing method of the LED at least comprises: orderly forming a joint layer, a metal reflection layer, a geometrical pattern layer, an epitaxial structure and a first electrode on a permanent substrate; wherein, the geometrical pattern layer is provide with a periodical structure; forming a second electrode on one side of the permanent substrate, so as to finish the LED. The LED of the invention forms a reflection face with a periodical structure by the geometrical pattern layer and the metal reflection layer to reflect incident light with various angles, so that the LED can emit light concentrated from the positive direction, so as to improve light emitting ratio, and improve light emitting efficiency.

Description

technical field [0001] The present invention relates to a light-emitting diode and its manufacturing method, in particular to a light-emitting diode capable of improving light extraction rate and its manufacturing method. Background technique [0002] Light-emitting diodes are stacked with a Homostructure, Single Heterostructure, Double Heterostructure (DH), or Multiple Quantum Well (MQW) structure. The epitaxial structure, which can naturally emit light of different wavelengths, is a p-n junction diode. Because light-emitting diodes have good photoelectric characteristics such as low power consumption, low calorific value, long working life, impact resistance, small size, fast response speed, and can emit color light with stable wavelengths, they are often used in home appliances, indicator lights of instruments, The application light source of optoelectronic products and the field of optoelectronic communication. [0003] A traditional light-emitting diode is based on a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/46
CPCH01L33/46H01L2933/0083H01L33/0079H01L2933/0091H01L33/0093
Inventor 余国辉杨于铮林安茹柯淙凯陈纬守古依雯郭政达
Owner EPISTAR CORP
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