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Protective circuit for electrostatic discharge and method for manufacturing the same

一种静电放电防护、制造方法的技术,应用在静电、电路、半导体/固态器件制造等方向,能够解决无显示信息等问题,达到改善伤害的效果

Inactive Publication Date: 2008-10-01
INNOCOM TECH (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem that the electrostatic discharge protection circuit 10 in the prior art has no display information when the charge is released, it is necessary to provide an electrostatic discharge protection circuit with a display function

Method used

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  • Protective circuit for electrostatic discharge and method for manufacturing the same
  • Protective circuit for electrostatic discharge and method for manufacturing the same
  • Protective circuit for electrostatic discharge and method for manufacturing the same

Examples

Experimental program
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Embodiment Construction

[0017] see image 3 , which is a schematic cross-sectional view of the first embodiment of the electrostatic discharge protection circuit of the present invention. The ESD protection circuit 20 includes a silicon substrate 201 , an iron film 202 , a carbon nanotube layer 203 and a transparent mask 204 . The iron thin film 202 and the carbon nanotube layer 203 are sequentially stacked on the surface of the silicon substrate 201. The areas of the iron thin film 202 and the carbon nanotube layer 203 are slightly smaller than the area of ​​the silicon substrate 201. The carbon nanotubes Layer 203 is composed of several carbon nanotubes deposited on the surface of the iron film 202 . The transparent mask 204 accommodates the iron thin film 202 and the carbon nanotube layer 203 and is sealed with the silicon substrate 201. The surface of the transparent mask 204 is curved, and the inner surface of the transparent mask 204 is evenly coated with fluorescent light. Powder 205.

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PUM

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Abstract

The present invention provides an electrostatic discharge protection circuit and its preparing method. The electrostatic discharge protection circuit includes a silicon substrate, an iron film, a nano-carbon tube layer and a transparent cover, the iron film and the nano-carbon tube layer are overlapped on the surface of the silicon substrate in turns, the transparent cover contains the iron film and the nano-carbon tube layer, and sealed with the silicon substrate, the inner surface of the transparent cover is coated with phosphor.

Description

technical field [0001] The invention relates to an electrostatic discharge protection circuit and a manufacturing method thereof. Background technique [0002] Electrostatic discharge (Electro Static Discharge, ESD) is the main factor that causes most electronic components or electronic systems to be damaged by electrical overstress (Electrical Overstress, EOS). Electrostatic discharge may cause permanent damage to semiconductor components, etc., thus affecting the circuit function of integrated circuits and making electronic products work abnormally. The generation of electrostatic discharge generally lies in the accumulation of static electricity in the human body, instruments or storage equipment during the manufacturing, production, assembly, testing, storage or handling of electronic components or systems, and even the electronic components themselves will have static electricity accumulation . When the human body, instruments or storage equipment come into contact wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05F3/04H05F3/00
CPCH01L23/60H01L21/67766H01L21/67742H01L2924/0002H01L21/6732H01L2924/00
Inventor 颜硕廷
Owner INNOCOM TECH (SHENZHEN) CO LTD