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Developing method for improving critical dimension uniformity

A development method and critical dimension technology, which is applied in the processing of photosensitive materials, etc., can solve problems such as critical dimension limitation, and achieve the effects of improving uniformity, improving accuracy, and increasing contact degree

Active Publication Date: 2011-01-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the above-mentioned developing process, often because of the unidirectional mixing and developing, the developing solution will cause the problem of critical size limitation due to the force tending to one direction.

Method used

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  • Developing method for improving critical dimension uniformity
  • Developing method for improving critical dimension uniformity
  • Developing method for improving critical dimension uniformity

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Embodiment Construction

[0019] The invention relates to a developing method for improving the uniformity of the critical dimension, which can greatly improve the critical dimension problem existing in the existing developing technology without additionally increasing the cost of machine equipment.

[0020] Please also refer to figure 1 and figure 2 As shown, the present invention is about mixing process parameters in the development process parameters (recipe) used in the existing process, and newly adds negative mixing process parameters to increase the reverse force applied to the developed photoresist. glue to increase the accuracy of the exposure. Adopt the developing step after the scheme modification of the present invention, will be as figure 1 As shown, first, as described in step S1, the chip with the exposed photoresist coating on the surface is adsorbed on the spinner; then, as described in step S2, the developer is sprayed on the surface of the chip; then, as described in step S3 and ...

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Abstract

The invention provides a developing method for improving the uniformity of critical dimension. In the method, existing machine station equipment is used and unidirectional mixing process in the existing developing process steps is changed into alternative direction mixing process, therefore, without increasing the cost of extra equipment such as machine stations, the contact degree between the developer and the exposed photo-induced anti-corrosion coating is increased so as to greatly improve the precision of exposal, improve the uniformity of critical dimension during the developing process and lead the critical dimension to comply with current micro-processing dimensions.

Description

technical field [0001] The invention relates to a method for improving the uniformity of critical dimension, in particular to a method for improving the uniformity of critical dimension in the developing step. Background technique [0002] After exposure and post-exposure bake, the photoresist coating is ready for development to reveal the latent pattern transferred by the photoresist coating. Therefore, the accuracy of development is related to the accuracy of the line width of the entire process. Especially now that the features of components have entered the nanometer stage, the critical dimension of development plays a pivotal role in affecting the accuracy of the entire process. [0003] The existing development process is carried out in the way of spraying / mixing (Spray / Puddle), which first sprays the developer on the surface of the chip placed on the rotator, and then puts the chip in a stationary state against the surface The tension is unidirectional for mixing an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/30
Inventor 郑铭仁
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP