Radio frequency power source system and plasma reactor chamber using the radio frequency power source system

Abstract

The invention relates to a radio frequency power source which is applied to a plasma reaction chamber. A frequency synthesis method or a radio frequency signal oscillator is adopted to generate N radio frequency signals and a wideband power amplifier is used for amplifying the N radio frequency signals, and then the amplified radio frequency signals are separated. Therefore, the radio frequency power with various frequencies is outputted by a radio frequency system. Electively, the frequencies can be switched, thereby users can select from the frequencies outputted by the radio frequency power source system. The invention further discloses a plasma reaction chamber which uses the radio frequency power source.

Description

【Technical field】 [0001] The invention relates to a radio frequency power source applied in a plasma reaction chamber, in particular to a radio frequency power source system capable of generating multiple frequencies and a plasma reaction chamber using the radio frequency power source system. 【Background technique】 [0002] Plasma reaction chambers using two radio frequency frequencies (dual frequency) already exist in the prior art. Generally, the frequency of the RF bias power (RF bias power) received by the dual-frequency plasma reaction chamber is lower than about 15 MHz, and the frequency of the RF source power (RF source power) is higher, generally 40-200 MHz. The RF bias power refers to the RF power used to control ion energy and energy distribution, and the RF source power refers to the RF power used to control ion dissociation or plasma density in the plasma. In certain applications, etch processes are performed in plasma chambers using a bias frequency of 2MHz or ...

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