Magnetic sensor and manufacturing method thereof
The technology of a magnetic sensor and manufacturing method, which is applied in the field of magnetic sensors, can solve problems such as troublesome manufacturing of magnetic sensors, and achieve the effect of reducing the change of magnetic field
Inactive Publication Date: 2008-10-22
YAMAHA CORP
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Problems solved by technology
This can cause trouble in the manufacture of magnetic sensors
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Abstract
This invention discloses a magnetic sensor and manufacturing method thereof. The magnetic sensor includes a plurality of giant magnetoresistance components, each of which includes a free layer, a conductive layer and a fixing layer orderly laminated on the substrate, wherein the fixing layer is formed by orderly laminating a first magnetic layer, a Ru layer, a second magnetic layer and an anti-ferromagnetic layer; a magnetizing heat treatment is carried out to fix the magnetizing direction of the fixing layer. The thickness magnetic moments of the first and second magnetic layers are different from each other; the thickness of the Ru layer is in the range of four to ten. The magnetocaloric treatment is carried out to maintain a anti-parallel state between the first and second magnetic layers. A giant magnetoresistance component is formed by using a plane surface and the others are formed by using corresponding slope on the substrate so as to detect a magnetic field along three axial directions. According to this invention, it is easily to control the magnetizing direction of the fixing layer in the heat treatment.
Description
Magnetic sensor and manufacturing method thereof technical field The present invention relates to a magnetic sensor, each of which includes a plurality of giant magnetoresistive elements formed on a single substrate to detect magnetic field density (or magnetic field strength) in biaxial or triaxial directions. The invention also relates to a method of manufacturing a magnetic sensor. Background technique As elements for magnetic sensors, giant magnetoresistance elements (GMR elements) and tunnel magnetoresistance elements (TMR elements) are conventionally known. Each conventionally known magnetoresistive element comprises a pinned layer whose magnetization direction is pinned (or fixed) and a free layer whose magnetization direction changes in response to an external magnetic field, wherein the magnetoresistive element exhibits a magnetization suitable for the pinned layer. orientation and the correlation between the orientation of the magnetization of the free layer and...
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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09
CPCG01R33/093H01L43/12B82Y25/00H10N50/01
Inventor 相曾功吉
Owner YAMAHA CORP
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