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Spin torque transfer mram device

A magnetic memory, memory technology, applied in static memory, read-only memory, digital memory information and other directions, can solve problems such as high current density

Active Publication Date: 2008-11-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, writing to magnetic assemblies using spin torque transfer (STT) also has disadvantages due to the considerable current density required to switch the magnetization direction of the free layer in the magnetic assembly.

Method used

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  • Spin torque transfer mram device
  • Spin torque transfer mram device
  • Spin torque transfer mram device

Examples

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Embodiment Construction

[0015] The present invention provides a magnetoresistive random access memory device (MRAM), in particular a rotary torque transfer magnetic assembly. It is to be understood, however, that the specific embodiments are exemplified to teach the broader inventive concepts, and that one of ordinary skill can readily apply the teachings of the present disclosure to other methods or devices. In addition, it can be understood that the methods and devices disclosed in the present invention include some existing structures and / or processes. Since these structures and processes are well known in the art, they are discussed only in general level of detail. In addition, for convenience and as an example, reference numerals are repeated throughout the drawings, and this repetition does not mean that any features or steps must be combined in the whole drawing. Furthermore, the formation of a second feature above and above a first feature in the following description includes embodiments wh...

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Abstract

The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

Description

technical field [0001] The present invention relates to a non-volatile memory device, in particular a magnetoresistive random access memory (MRAM) device using rotational torque transfer. Background technique [0002] Magnetoresistive Random Access Memory (MRAM) is a non-volatile memory technology that uses magnetization to exhibit stored data. The advantage of MRRAM is that it can retain stored data in the absence of power. Generally, MRRAM includes a plurality of magnetic cells in an array. Each cell basically represents a data bit. Included with this unit is the magnetic assembly. A magnetic assembly includes two ferromagnetic "plates" (or layers on a semiconductor substrate), each ferromagnetic plate having a magnetization direction (or magnetic momentum direction) associated therewith. The two ferromagnetic plates are separated by a thin nonmagnetic layer. [0003] More specifically, MRRAM cells are often based on magnetic tunnel junction devices (also tunneling ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/22G11C11/15G11C11/16G11C16/10
CPCG11C11/16H01L43/08G11C11/161G11C11/1675H10N50/10
Inventor 王郁仁邓端理郑旭辰
Owner TAIWAN SEMICON MFG CO LTD