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Memory cell comprising nickel-cobalt oxide switching element

A storage unit and component technology, applied in the direction of electrical components, semiconductor devices, electric solid devices, etc.

Active Publication Date: 2010-11-17
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Large amplitude pulses have many disadvantages

Method used

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  • Memory cell comprising nickel-cobalt oxide switching element
  • Memory cell comprising nickel-cobalt oxide switching element
  • Memory cell comprising nickel-cobalt oxide switching element

Examples

Experimental program
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example

[0052] Example: Manufacturing

[0053] See Figure 7a , the formation of the memory starts with the substrate 100 . This substrate 100 can be any semiconductor substrate known in the art, such as single crystal silicon, IV-IV compounds like silicon-germanium or silicon-germanium-carbon, III-V compounds, II-VII compounds, such epitaxial layer or any other semiconducting material over these substrates. The substrate may include integrated circuits fabricated therein.

[0054] An insulating layer 102 is formed over the substrate 100 . The insulating layer 102 can be silicon oxide, silicon nitride, high dielectric film, Si-C-O-H film or any other suitable insulating material.

[0055] The first conductor 200 is formed on the substrate 100 and the insulator 102 . An adhesive layer 104 may be included between the insulating layer 102 and the conductive layer 106 to facilitate the adhesion of the conductive layer 106 . A preferred material for the adhesion layer 104 is titanium...

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Abstract

Oxides of both nickel and cobalt have lower resistivity than either nickel oxide or cobalt oxide. Nickel oxide and cobalt oxide can be reversibly switched between two or more stable resistivity states by application of suitable electrical pulses. It is expected that oxides including both nickel and cobalt, or (NixCOy)O, will switch between resistivity states at lower voltage and / or current than will nickel oxide or cobalt oxide. A layer of (NixCoy)O can be paired with a diode or transistor to form a nonvolatile memory cell.

Description

[0001] Related applications [0002] This application is entitled "Device Having Reversible Resistivity-Switching Metal Oxide or Nitride Layer with Added Metal" by Herner et al. 11 / 287,452 (hereinafter referred to as the '452 application), which is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to resistivity switching metal oxides, in particular, the present invention relates to nickel oxide and cobalt oxide. Background technique [0004] These materials can be reversibly switched between two or more stable resistivity states by applying appropriate electrical bias pulses. These resistivity states may correspond to the data states of the nonvolatile memory cells. [0005] Nickel oxide and cobalt oxide can be formed in a high-resistivity state. In some embodiments, it has been found that the first pulse required to perform a switch from an initial high-resistivity state to a lower-resistivity state may be greater ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24H01L45/00H10N80/00H10N99/00
CPCH01L45/146H01L45/145H01L45/1658H01L45/1625H01L45/165H01L27/2463H01L45/1675H01L45/1233H01L45/04H01L27/2409H10B63/20H10B63/80H10N70/20H10N70/883H10N70/043H10N70/046H10N70/026H10N70/8833H10N70/826H10N70/063H01L27/105H10B63/00
Inventor S·布拉德·赫纳
Owner SANDISK TECH LLC