Production method and application of lithium niobate/III family nitride heterojunction ferroelectric semiconductor film

Abstract

The invention relates to a preparation method of a LiNbO3 / III nitride heterostructure ferroelectric semiconductor thin film, the metal organic chemical vapor deposition method is firstly adopted to grow AlN / AlGaN and other heterostructure materials on a (0001)-plane sapphire substrate as a buffer layer or a compound substrate; then the buffer layer adopts a high-purify 5N ferroelectric material as a target material, the pulsed laser deposition method is used to obtain a high-quality ferroelectric material thin film on the heterostructure buffer layer or the compound substrate; the vacuum of agrowth cavity is controlled to be more than 10<minus 3> Torr; the temperature of the substrate is increased to 300 to 900 DEG C, then high-purity oxygen is introduced into the cavity, the oxygen pressure is controlled at 5 to 90 Pa; the frequency of a laser is adjusted to be 5HZ, the energy is 300mJ, the target material is carried out the laser pre-sputtering in advance for 3 to 5 minutes, and the surface pollution of the substrate is cleaned; finally, the pulsed laser is focused on the target material, and a target source is opened to grow the LiNbO3 / III nitride heterostructure ferroelectricsemiconductor thin film on the heterostructure compound substrate.

Description

technical field [0001] The invention relates to a new method for depositing ferroelectric thin film lithium niobate thin film on group III nitride and heterojunction by using pulsed laser deposition method, especially for preparing ferroelectric semiconductor heterostructure thin film material LiNbO 3 / AlGaN / GaN methods and applications. Background technique [0002] The so-called ferroelectric material means that the crystal structure of the material has a spontaneous polarization phenomenon when no external electric field is applied, and the direction of its spontaneous polarization can be reversed or reoriented by an external electric field. This property of ferroelectric materials is known as "ferroelectricity" or "ferroelectric effect". When a voltage is applied to the crystal, the dipoles align under the action of the electric field. Changing the direction of the voltage reverses the direction of the dipole. This reversibility of the dipoles means that they can repr...

AI Technical Summary

Problems solved by technology

However, there are still difficulties in the processing of ferroelectric oxides

For example, high processing temperatures and the resulting chemical reactions of the components make ferroelectric oxides difficult to integrate on silicon-based integrated circuits

Difficulties in the integration of ferroelectric materials and silicon-based materials severely limit the development of this field

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