Plasma processing apparatus

Abstract

The present invention provides a plasma processing device, wherein gas discharge ports (15) uniformly formed at a plurality of areas on an inner circumference side of a chamber (1) are connected to an annular communicating path (13) of a clearance formed by a step section (18) and another step section (19) at a contact surface section between the upper end of a lower chamber (2) and the lower end of an upper plate (27) of a cover section (30) through a gas introducing path (14). The annular communicating path (13) has a function as a gas distributing means for uniformly distributing and supplying a gas to each gas introducing path (14), and is connected to a gas supply source (16), through a gas path (12) and a gas introducing port (72) formed in a vertical direction at a discretionary area in a wall of the lower chamber (2).

Description

technical field [0001] The present invention relates to a plasma processing apparatus, and more specifically, to a plasma processing apparatus for processing an object to be processed such as a semiconductor substrate using plasma. Background technique [0002] As a plasma processing apparatus, a plasma processing apparatus of the RLSA system is known in which microwaves are introduced into a processing chamber through a radial line slot antenna (Radial Line Slot Antenna) to generate plasma (for example, WO98 / 33362). This RLSA type plasma processing apparatus includes a cylindrical container including a mounting table on which an object to be processed is placed, and an antenna unit for radiating microwaves composed of a slot (Slot) plate and a waveguide dielectric. The above-mentioned antenna part is mounted on the upper end, and the vacuum chamber is constituted by sealing the junction part with a sealing member. [0003] In order to perform optimum processing in the plas...

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Problems solved by technology

[0004] However, a gas ejection port is formed on the side wall of the vacuum chamber to introduce the processing gas. In this way, it is difficult to uniformly eject the processing gas to the plasma forming space in the vacuum chamber to form a uniform plasma. body is difficult

[0005] Moreover, in order to achieve the purpose of introducing uniform gas into the vacuum chamber, gas ejection holes are provided in multiple places on the side wall of the vacuum chamber to supply the gas. Since the gas supply must be arranged around the vacuum chamber Therefore, there are design constraints such as the need for sufficient installation space, or the complicated installation of piping so as not to interfere with the loading and unloading of substrates.

In addition, in order to uniformly eject the processing gas supplied at a certain flow rate into the vacuum chamber, it must be considered that the pressure loss on the processing gas supply passage is the same. It is difficult to have the same length of the gas supply pipes for the gas outlet, so there will be a difference in pressure loss

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