Method of preparing groove type power transistor
A technology for power transistors and manufacturing methods, which is applied in the manufacture of trench-type power transistors and the field of power transistor manufacturing, can solve the problems of lower yield, increase component variability, and cumbersome manufacturing process of trench-type power transistors, etc., and achieve shortening Effect of process cycle and cost reduction
Inactive Publication Date: 2008-12-24
HEJIAN TECH SUZHOU
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Such a manufacturing process leads to a cumbersome manufacturing process of trench power transistors and low production efficiency.
At the same time, it also increases the variability of components to a certain extent, which is prone to large deviations and reduces the yield
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0018] Such as Figure 1 to Figure 7 A method for manufacturing a trench-type power transistor is shown. This method includes at least two furnace tube oxidation steps, four mask plates and four photolithography process steps. The two furnace tube oxidation steps are pad layers Oxidation and gate oxidation steps; the four-layer mask and four photolithography process steps are divided into forming active region forming steps, contact window 9 deposition and forming steps, metal layer 10 deposition and forming steps, passivation Layer 11 sealing and shaping steps.
[0019] Specifically, as figure 1 Shown: first put N + , N - ,P - , N + They are arranged in a bottom-up order, and at the same time, pad growth 5 is formed. Further, the underlying N + as N + Substrate 1, N - ,P - common as N - Epi layer 2 and P - epitaxial layer 3, while the top N + Also as N + Epitaxial layer 4. Subsequent silicon oxide deposition is performed on the pad growth 5 into figure 2 The ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a manufacturing method of a groove-typed power transistor, which pertains to the manufacturing field of semiconductors. The method comprises two oxidation steps of a boiler tube and the technical steps of a four-layer mask and four-step photoetching. The two oxidation steps of the boiler tube are the growing steps of the oxidation of a cushion coat and the oxidation of a grid; the technical steps of the four-layer mask and the four-step photoetching are the forming step of an active area, the depositing and forming step of a contact hole, the depositing and forming step of a metal layer and the sealing and forming step of a passivating layer. The method can achieve the purpose of the planarization of an inner dielectric layer without steps of the oxidation of the inner dielectric layer, chemical mechanical polishing or the oxidation and etch-back of the inner dielectric layer.
Description
technical field [0001] The invention relates to a method for manufacturing a power transistor, in particular to a method for manufacturing a trench-type power transistor, and belongs to the field of semiconductor manufacturing. Background technique [0002] As far as the current manufacturing process of trench power transistors is concerned, at least six layers of masks and six photolithographic process steps are often required, namely 1) active region, 2) P-well, 3) N+ source region, 4 ) contact window, 5) metal layer, 6) passivation layer; and 4 furnace tube oxidation and heat treatment process steps, namely 1) pad layer oxidation, 2) gate oxidation, 3) P-well drive, 4) with source activation. Such a manufacturing process leads to a complicated manufacturing process of the trench power transistor and low production efficiency. At the same time, it also increases the variability of components to a certain extent, which is prone to large deviations and reduces the yield. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L21/336
Inventor 黄清俊陈斌李召兵石亮
Owner HEJIAN TECH SUZHOU