Large scale atomic gate nanometer measuring device

Abstract

The present invention discloses a large-scale atom-lattice nanometer measuring device, and comprises a multi-level shock-absorption system and a base, and is characterized in that a combined shock absorption terrace that is arranged on the base is provided with a nanometer feeding working terrace, and the movable nanometer feeding working terrace is provided with an atom lattice, and the nanometer feeding working terrace drives the atom lattice to move; a probe on a scanning tunnel microscope is arranged above the atom lattice, and the probe is driven by a piezoelectric ceramic driving device to move; a signal collector is connected with the scanning tunnel microscope; a pulse circuit converts the analog signal into a pulse signal to trigger the counter to count the number, and then is inputted into a computer to be processed. The measuring device greatly increases the measuring range and adapts to the requirements of the nanometer component processing technology; the maximum range on the direction of X is 20 mm, and the maximum range on the direction of Y is 20 mm; the nanometer measurement can be performed both on the direction of X and the direction of Y; the measurement range is decided by the maximum distance of the nanometer feeding working terrace.

Description

technical field [0001] The invention relates to an atomic grid nanometer measurement device, especially a large-scale atomic grid nanometer measurement device; it is an instrument for measuring mechanical and physical quantities such as surface topography, length, displacement, etc. Assembly, nanomeasurement and nanofabrication. Background technique [0002] With the development of manufacturing technology towards the microscopic and high-precision direction, nano-measurement technology and nano-processing technology have developed rapidly. At present, nanometer measurement mainly includes ① scanning tunneling microscope (STM), atomic force microscope (AFM) measurement; ② X-ray interferometer measurement; ③ Fabry-Perot etalon micrometry system and various optical nanometer measurement methods. The scanning tunneling microscope applies a bias voltage between the probe and the workpiece to be measured. When the gap between the probe and the workpiece is less than 5 nanometers...

AI Technical Summary

Problems solved by technology

However, since the scanning range of the scanning tunneling microscope (STM) is about 10 μm × 10 μm, it is impossible to completely engrave all the patterns on the integrated circuit chip at one time. Therefore, to apply this technology to manufacture integrated circuit chips, it is necessary to develop large-scale nanometer measuring system

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