Large scale atomic gate nanometer measuring device

A measuring device and atomic grid technology, applied in measuring devices, electromagnetic measuring devices, electrical devices, etc., can solve the problem of not being able to engrave integrated circuit chip patterns, and achieve the effect of increasing the measuring range

Inactive Publication Date: 2011-01-26
CHONGQING UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, since the scanning range of the scanning tunneling microscope (STM) is about 10 μm × 10 μm, it is impossible to completely engrave all the patterns on the integrated circuit chip at one time. Therefore, to apply this technology to manufacture integrated circuit chips, it is necessary to develop large-scale nanometer measuring system

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  • Large scale atomic gate nanometer measuring device
  • Large scale atomic gate nanometer measuring device
  • Large scale atomic gate nanometer measuring device

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Embodiment Construction

[0017] Such as figure 1 Middle, 1—vibration damping spring, 2—bracket, 3—magnetic vibration damping system, 4—base, 5—combined vibration damping platform, 6—nanometer feed table, 7—atom grid, 8—probe, 9 — Piezoelectric ceramic driver, 10 — stainless steel block, 11 — copper block, 12 — magnet, 13 — scanning tunneling microscope, 14 — signal collector.

[0018] figure 2 Among them, 14—signal collector, 15—pulse circuit, 16—counter, 17—computer, 18—display printing equipment.

[0019] The large-scale atomic grid nano-measurement device of the present invention includes a multi-stage damping system, which consists of two damping springs 1 arranged on the bracket 2 to form a two-stage spring damping, and then through the magnetic damping system 3 and a combined damping platform 5, wherein the magnetic damping system 3 includes stainless steel block 10, copper block 11, magnet 12 and other components, the damping spring 1 and the magnetic damping system 3 are connected with the ...

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Abstract

The present invention discloses a large-scale atom-lattice nanometer measuring device, and comprises a multi-level shock-absorption system and a base, and is characterized in that a combined shock absorption terrace that is arranged on the base is provided with a nanometer feeding working terrace, and the movable nanometer feeding working terrace is provided with an atom lattice, and the nanometer feeding working terrace drives the atom lattice to move; a probe on a scanning tunnel microscope is arranged above the atom lattice, and the probe is driven by a piezoelectric ceramic driving deviceto move; a signal collector is connected with the scanning tunnel microscope; a pulse circuit converts the analog signal into a pulse signal to trigger the counter to count the number, and then is inputted into a computer to be processed. The measuring device greatly increases the measuring range and adapts to the requirements of the nanometer component processing technology; the maximum range onthe direction of X is 20 mm, and the maximum range on the direction of Y is 20 mm; the nanometer measurement can be performed both on the direction of X and the direction of Y; the measurement range is decided by the maximum distance of the nanometer feeding working terrace.

Description

technical field [0001] The invention relates to an atomic grid nanometer measurement device, especially a large-scale atomic grid nanometer measurement device; it is an instrument for measuring mechanical and physical quantities such as surface topography, length, displacement, etc. Assembly, nanomeasurement and nanofabrication. Background technique [0002] With the development of manufacturing technology towards the microscopic and high-precision direction, nano-measurement technology and nano-processing technology have developed rapidly. At present, nanometer measurement mainly includes ① scanning tunneling microscope (STM), atomic force microscope (AFM) measurement; ② X-ray interferometer measurement; ③ Fabry-Perot etalon micrometry system and various optical nanometer measurement methods. The scanning tunneling microscope applies a bias voltage between the probe and the workpiece to be measured. When the gap between the probe and the workpiece is less than 5 nanometers...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/28G01B7/02
Inventor 罗静詹捷王春欢龚文均
Owner CHONGQING UNIV OF TECH
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