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Wafer reverse side grinding method

A backside grinding and wafer technology, applied in the direction of grinding devices, grinding machine tools, electrical components, etc., can solve the problems of increasing wafer damage rate, high grinding process cost, etc., and achieve the effect of increasing the damage rate

Inactive Publication Date: 2011-05-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the wafer needs to be ground to 8mil, the calculated grinding thickness is about 333μm (130μm+8*25.4μm), which is less than the minimum grinding thickness limit of the grinding device, which is 400μm. Therefore, in this case, just It is necessary to replace the grinding device with better performance. For example, the grinding device with a minimum grinding thickness limit of 300μm, because the original grinding device can only ensure that the wafer is ground to 11mil. If you continue to grind the wafer thinner (for example, 8mil), the grinding The reduced stability of the device will inevitably increase the broken rate of the wafer, and replacing the grinding device with better performance means increasing the cost of the grinding process

Method used

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no. 1 example

[0039]In this embodiment, the minimum grinding thickness limit of the grinding device is 400 μm, and the thickness of one layer of the protective tape is 130 μm to 160 μm. Taking 130μm as an example, if a layer of protective tape is attached to the front of the wafer, the wafer thickness that the grinding device can achieve is 11mil (130μm+11*25.4μm=410μm>400μm, 130μm+10*25.4μm=384μm 400μm, 130μm*2+5*25.4μm=387μm< 400 μm), that is to say, when a second layer of protective tape is attached to the front of the wafer, the thinnest thickness that the grinding device can grind the wafer to is 6mil. From the above calculation, it can be known that increasing the number of layers of protective tape from one layer to two layers can use the original grinding device to grind the wafer to a wafer thickness that cannot be achieved originally, such as 6 to 10 mil. Therefore, increasing the number of layers of protective tape attached to the front of the wafer can reduce the thinnest thick...

no. 2 example

[0049] The difference between this embodiment and the first embodiment is that the first embodiment does not change the thickness of the protective tape but increases the number of layers of the protective tape to increase the thickness of the protective tape attached to the front of the wafer. The number of layers of protective tape is to choose a thicker protective tape to increase the thickness of the protective tape attached to the front side of the wafer.

[0050] In this embodiment, the steps of grinding the wafer to 8 mil using the above-mentioned grinding device whose minimum grinding thickness limit is 400 μm are as follows: Figure 4 shown.

[0051] Step S41 , providing a wafer, the wafer has a front surface on which integrated circuits are formed and a back surface corresponding to the front surface, and the size of the wafer is 8 inches.

[0052] Step S42, attaching a layer of protective tape to the front surface of the wafer, wherein the thickness of the protecti...

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Abstract

The invention relates to a method for grinding the back of a wafer. The method comprises the following steps: the wafer is provided; the wafer has a front side which is formed with an integrated circuit and a back side corresponding to the front side; a protecting adhesive tape is adhered to the front side of the wafer; the thickness of the protecting adhesive tape is larger than or equal to the difference between the minimal grinding thickness limit of a grinding device and the preset thickness of the wafer; the grinding thickness is calculated and is the sum of the thickness of the protecting adhesive tape adhered to the front side of the wafer and the preset thickness of the wafer; the wafer is loaded in the grinding device to expose the back side of the wafer; and according to the grinding thickness obtained by calculation, the back side of the wafer is ground. The method for grinding the back side of the wafer can lead the grinding device to grind the wafer to be thinner and simultaneously can not increase the breaking rate of the wafer.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a wafer back grinding method. Background technique [0002] With the thinning trend of semiconductor packaging components, the semiconductor wafers in the packaging components also need to meet a thinner thickness. Therefore, after the integrated circuit manufacturing process on the wafer and before the wafer dicing process, there is also a wafer back grinding process. , so that multiple wafers on the wafer can be thinned at one time. [0003] In the wafer back grinding process of the prior art, as described in the Chinese patent application No. 03150009.9, it is necessary to attach a protective tape to the front of the wafer where the integrated circuit is formed before the back grinding of the wafer, so as to protect the front from are worn, the protective tape is removed after the wafer backside grinding is complete. A kind of wafer back grinding method is specificall...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04H01L21/304
Inventor 许顺富傅俊陆志卿赖海长
Owner SEMICON MFG INT (SHANGHAI) CORP
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